The characteristics of p-type Mg doped GaN films diffused with Si were studied. N-type conductivity was achieved, and the carrier mobility of diffused GaN was found to be 90-150 cm2 V-1s-1, which was higher than that of p-GaN but less than that of epitaxially grown n-GaN. It was found that the Mg acceptor states could become deep compensating defects, which could enable carrier transport dominated by electron hopping or diffusion. The results show that thermal annealing may induce defects at the surface, leading to an additional activation energy Ed∼10meV in the 200-500 K region in the diffused GaN.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 Jul 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering