Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer used on InGaN/GaN laser diode

C. J. Tun, R. C. Tu, Jinn-Kong Sheu, C. C. Chou, T. C. Wang, C. E. Tsai, G. C. Chi

Research output: Contribution to conferencePaper

Abstract

Si-doped n + -In 0.23 Ga 0.77 N/GaN short-period super-period superlattice (SPS) tunneling contact layer were used on InGaN/GaN multiple-quantum-well laser diode (LD) structures which were grown by metal-organic chemical vapor deposition (MOCVD). The n + -In 0.23 Ga 0.77 N/GaN SPS was used to instead of the p-type GaN as a top contact layer. The lower forward voltages, smaller series resistances, and lower threshold current of the LD with SPS contact layer were achieved. On the other hand, the LD with an SPS layer exhibited a longer lasing duration than that of LD without an SPS layer under pulse operation. When the widths of input pulse were lengthened from 300 ns to 2 s, the lasing duration of the LD with Pt contact was three times longer than that of the LD with Ni/Au contact. Therefore, one would like to conclude that nitride-based LDs with an SPS tunneling contact layer will significantly reduce the contact resistance and increase the thermal stability of the device reliability.

Original languageEnglish
Pages254-259
Number of pages6
Publication statusPublished - 2004 Dec 1
EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
CountryUnited States
CityHonolulu, HI
Period04-10-0304-10-08

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Semiconductor lasers
Quantum well lasers
Organic chemicals
Contact resistance
Nitrides
Semiconductor quantum wells
Chemical vapor deposition
Thermodynamic stability
Electric potential
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Tun, C. J., Tu, R. C., Sheu, J-K., Chou, C. C., Wang, T. C., Tsai, C. E., & Chi, G. C. (2004). Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer used on InGaN/GaN laser diode . 254-259. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.
Tun, C. J. ; Tu, R. C. ; Sheu, Jinn-Kong ; Chou, C. C. ; Wang, T. C. ; Tsai, C. E. ; Chi, G. C. / Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer used on InGaN/GaN laser diode Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.6 p.
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title = "Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer used on InGaN/GaN laser diode",
abstract = "Si-doped n + -In 0.23 Ga 0.77 N/GaN short-period super-period superlattice (SPS) tunneling contact layer were used on InGaN/GaN multiple-quantum-well laser diode (LD) structures which were grown by metal-organic chemical vapor deposition (MOCVD). The n + -In 0.23 Ga 0.77 N/GaN SPS was used to instead of the p-type GaN as a top contact layer. The lower forward voltages, smaller series resistances, and lower threshold current of the LD with SPS contact layer were achieved. On the other hand, the LD with an SPS layer exhibited a longer lasing duration than that of LD without an SPS layer under pulse operation. When the widths of input pulse were lengthened from 300 ns to 2 s, the lasing duration of the LD with Pt contact was three times longer than that of the LD with Ni/Au contact. Therefore, one would like to conclude that nitride-based LDs with an SPS tunneling contact layer will significantly reduce the contact resistance and increase the thermal stability of the device reliability.",
author = "Tun, {C. J.} and Tu, {R. C.} and Jinn-Kong Sheu and Chou, {C. C.} and Wang, {T. C.} and Tsai, {C. E.} and Chi, {G. C.}",
year = "2004",
month = "12",
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language = "English",
pages = "254--259",
note = "State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia ; Conference date: 03-10-2004 Through 08-10-2004",

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Tun, CJ, Tu, RC, Sheu, J-K, Chou, CC, Wang, TC, Tsai, CE & Chi, GC 2004, ' Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer used on InGaN/GaN laser diode ' Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States, 04-10-03 - 04-10-08, pp. 254-259.

Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer used on InGaN/GaN laser diode . / Tun, C. J.; Tu, R. C.; Sheu, Jinn-Kong; Chou, C. C.; Wang, T. C.; Tsai, C. E.; Chi, G. C.

2004. 254-259 Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer used on InGaN/GaN laser diode

AU - Tun, C. J.

AU - Tu, R. C.

AU - Sheu, Jinn-Kong

AU - Chou, C. C.

AU - Wang, T. C.

AU - Tsai, C. E.

AU - Chi, G. C.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Si-doped n + -In 0.23 Ga 0.77 N/GaN short-period super-period superlattice (SPS) tunneling contact layer were used on InGaN/GaN multiple-quantum-well laser diode (LD) structures which were grown by metal-organic chemical vapor deposition (MOCVD). The n + -In 0.23 Ga 0.77 N/GaN SPS was used to instead of the p-type GaN as a top contact layer. The lower forward voltages, smaller series resistances, and lower threshold current of the LD with SPS contact layer were achieved. On the other hand, the LD with an SPS layer exhibited a longer lasing duration than that of LD without an SPS layer under pulse operation. When the widths of input pulse were lengthened from 300 ns to 2 s, the lasing duration of the LD with Pt contact was three times longer than that of the LD with Ni/Au contact. Therefore, one would like to conclude that nitride-based LDs with an SPS tunneling contact layer will significantly reduce the contact resistance and increase the thermal stability of the device reliability.

AB - Si-doped n + -In 0.23 Ga 0.77 N/GaN short-period super-period superlattice (SPS) tunneling contact layer were used on InGaN/GaN multiple-quantum-well laser diode (LD) structures which were grown by metal-organic chemical vapor deposition (MOCVD). The n + -In 0.23 Ga 0.77 N/GaN SPS was used to instead of the p-type GaN as a top contact layer. The lower forward voltages, smaller series resistances, and lower threshold current of the LD with SPS contact layer were achieved. On the other hand, the LD with an SPS layer exhibited a longer lasing duration than that of LD without an SPS layer under pulse operation. When the widths of input pulse were lengthened from 300 ns to 2 s, the lasing duration of the LD with Pt contact was three times longer than that of the LD with Ni/Au contact. Therefore, one would like to conclude that nitride-based LDs with an SPS tunneling contact layer will significantly reduce the contact resistance and increase the thermal stability of the device reliability.

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M3 - Paper

SP - 254

EP - 259

ER -

Tun CJ, Tu RC, Sheu J-K, Chou CC, Wang TC, Tsai CE et al. Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer used on InGaN/GaN laser diode . 2004. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.