Si-MBE SOI DEVICE AND CIRCUITS.

T. L. Lin; K. L. Wang; S. Iyer

Si-MBE SOI DEVICE AND CIRCUITS.

T. L. Lin, K. L. Wang, S. Iyer

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

A 100 mu m wide silicon-on-insulator (SOI) structure has been achieved by utilized silicon molecular beam epitaxial (Si-MBE) growth and porous oxidized silicon. A Si-beam with flux density of 7. 8 multiplied by 10**1**3 cm** minus **2s** minus **1 was used to clean the sample surface at 750 degree C prior to MBE growth. The MBE Si film grown on porous Si at 750 degree C by a two-step growth process shows good crystallinity when checked by Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). SOI MOSFET's were successfully fabricated.

Original language	English
Pages (from-to)	316-322
Number of pages	7
Journal	Proceedings - The Electrochemical Society
Volume	85-7
Publication status	Published - 1985

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@article{ef1e45c5ee2046f39696c538e9dce843,

title = "Si-MBE SOI DEVICE AND CIRCUITS.",

abstract = "A 100 mu m wide silicon-on-insulator (SOI) structure has been achieved by utilized silicon molecular beam epitaxial (Si-MBE) growth and porous oxidized silicon. A Si-beam with flux density of 7. 8 multiplied by 10**1**3 cm** minus **2s** minus **1 was used to clean the sample surface at 750 degree C prior to MBE growth. The MBE Si film grown on porous Si at 750 degree C by a two-step growth process shows good crystallinity when checked by Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). SOI MOSFET's were successfully fabricated.",

author = "Lin, {T. L.} and Wang, {K. L.} and S. Iyer",

year = "1985",

language = "English",

volume = "85-7",

pages = "316--322",

journal = "Proceedings - The Electrochemical Society",

issn = "0161-6374",

}

TY - JOUR

T1 - Si-MBE SOI DEVICE AND CIRCUITS.

AU - Lin, T. L.

AU - Wang, K. L.

AU - Iyer, S.

PY - 1985

Y1 - 1985

N2 - A 100 mu m wide silicon-on-insulator (SOI) structure has been achieved by utilized silicon molecular beam epitaxial (Si-MBE) growth and porous oxidized silicon. A Si-beam with flux density of 7. 8 multiplied by 10**1**3 cm** minus **2s** minus **1 was used to clean the sample surface at 750 degree C prior to MBE growth. The MBE Si film grown on porous Si at 750 degree C by a two-step growth process shows good crystallinity when checked by Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). SOI MOSFET's were successfully fabricated.

AB - A 100 mu m wide silicon-on-insulator (SOI) structure has been achieved by utilized silicon molecular beam epitaxial (Si-MBE) growth and porous oxidized silicon. A Si-beam with flux density of 7. 8 multiplied by 10**1**3 cm** minus **2s** minus **1 was used to clean the sample surface at 750 degree C prior to MBE growth. The MBE Si film grown on porous Si at 750 degree C by a two-step growth process shows good crystallinity when checked by Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). SOI MOSFET's were successfully fabricated.

UR - http://www.scopus.com/inward/record.url?scp=0022233541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022233541&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0022233541

SN - 0161-6374

VL - 85-7

SP - 316

EP - 322

JO - Proceedings - The Electrochemical Society

JF - Proceedings - The Electrochemical Society

ER -

Si-MBE SOI DEVICE AND CIRCUITS.

Abstract

All Science Journal Classification (ASJC) codes

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