Si-MBE SOI DEVICE AND CIRCUITS.

T. L. Lin, K. L. Wang, S. Iyer

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

A 100 mu m wide silicon-on-insulator (SOI) structure has been achieved by utilized silicon molecular beam epitaxial (Si-MBE) growth and porous oxidized silicon. A Si-beam with flux density of 7. 8 multiplied by 10**1**3 cm** minus **2s** minus **1 was used to clean the sample surface at 750 degree C prior to MBE growth. The MBE Si film grown on porous Si at 750 degree C by a two-step growth process shows good crystallinity when checked by Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). SOI MOSFET's were successfully fabricated.

Original languageEnglish
Pages (from-to)316-322
Number of pages7
JournalProceedings - The Electrochemical Society
Volume85-7
Publication statusPublished - 1985

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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