We present a novel laser-assisted chemical vapor deposition (LACVD) system for growing Si nanocrystals embedded in a Si suboxide matrix at room temperature. Varying growth gas ratio caused the observed photoluminescence (PL) light emission to vary from 1.65 eV to 1.92 eV without post-annealing. A phase-separated model and PL measurements were used to identify Si nanocrystals embedded in Si suboxides.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|Publication status||Published - 2004 May|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)