Si nanowire-based humidity sensors prepared on glass substrate

H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu, B. T. Dai

Research output: Contribution to journalArticle

17 Citations (Scopus)


The authors report the growth of Si nanowires on glass substrate by low-temperature vapor-liquid-solid process and the fabrication of Si nanowire-based humidity sensors. It was found that average length of Si nanowires decreased from 1.6 to 1 μ{\rm m}$ while the diameter of Si nanowires increased from 90 to 490 nm as we increased the initial Au catalytic layer thickness from 5 nm to 15 nm. It was also found that current measured from these Si nanowires decreased monotonically with RH. Furthermore, it was found that samples with a thinner Au layer thickness could provide a larger sensor response.

Original languageEnglish
Article number5771029
Pages (from-to)3036-3041
Number of pages6
JournalIEEE Sensors Journal
Issue number11
Publication statusPublished - 2011 Nov 2

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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    Hsueh, H. T., Hsueh, T. J., Chang, S. J., Hung, F. Y., Weng, W. Y., Hsu, C. L., & Dai, B. T. (2011). Si nanowire-based humidity sensors prepared on glass substrate. IEEE Sensors Journal, 11(11), 3036-3041. [5771029].