Si nanowire-based humidity sensors prepared on glass substrate

H. T. Hsueh; T. J. Hsueh; S. J. Chang; F. Y. Hung; W. Y. Weng; C. L. Hsu; B. T. Dai

doi:10.1109/JSEN.2011.2156781

Si nanowire-based humidity sensors prepared on glass substrate

H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu, B. T. Dai

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19 Citations (Scopus)

Abstract

The authors report the growth of Si nanowires on glass substrate by low-temperature vapor-liquid-solid process and the fabrication of Si nanowire-based humidity sensors. It was found that average length of Si nanowires decreased from 1.6 to 1 μ{\rm m}$ while the diameter of Si nanowires increased from 90 to 490 nm as we increased the initial Au catalytic layer thickness from 5 nm to 15 nm. It was also found that current measured from these Si nanowires decreased monotonically with RH. Furthermore, it was found that samples with a thinner Au layer thickness could provide a larger sensor response.

Original language	English
Article number	5771029
Pages (from-to)	3036-3041
Number of pages	6
Journal	IEEE Sensors Journal
Volume	11
Issue number	11
DOIs	https://doi.org/10.1109/JSEN.2011.2156781
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2011.2156781

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title = "Si nanowire-based humidity sensors prepared on glass substrate",

abstract = "The authors report the growth of Si nanowires on glass substrate by low-temperature vapor-liquid-solid process and the fabrication of Si nanowire-based humidity sensors. It was found that average length of Si nanowires decreased from 1.6 to 1 μ{\rm m}$ while the diameter of Si nanowires increased from 90 to 490 nm as we increased the initial Au catalytic layer thickness from 5 nm to 15 nm. It was also found that current measured from these Si nanowires decreased monotonically with RH. Furthermore, it was found that samples with a thinner Au layer thickness could provide a larger sensor response.",

author = "Hsueh, {H. T.} and Hsueh, {T. J.} and Chang, {S. J.} and Hung, {F. Y.} and Weng, {W. Y.} and Hsu, {C. L.} and Dai, {B. T.}",

note = "Funding Information: Manuscript received January 24, 2011; revised March 29, 2011; accepted May 11, 2011. Date of publication May 19, 2011; date of current version October 26, 2011. This work was supported in part by the Center for Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract No. 98-D0204-6. The associate editor coordinating the review of this paper and approving it for publication was Prof. Michiel Vellekoop.",

year = "2011",

doi = "10.1109/JSEN.2011.2156781",

language = "English",

volume = "11",

pages = "3036--3041",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

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TY - JOUR

T1 - Si nanowire-based humidity sensors prepared on glass substrate

AU - Hsueh, H. T.

AU - Hsueh, T. J.

AU - Chang, S. J.

AU - Hung, F. Y.

AU - Weng, W. Y.

AU - Hsu, C. L.

AU - Dai, B. T.

N1 - Funding Information: Manuscript received January 24, 2011; revised March 29, 2011; accepted May 11, 2011. Date of publication May 19, 2011; date of current version October 26, 2011. This work was supported in part by the Center for Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract No. 98-D0204-6. The associate editor coordinating the review of this paper and approving it for publication was Prof. Michiel Vellekoop.

PY - 2011

Y1 - 2011

N2 - The authors report the growth of Si nanowires on glass substrate by low-temperature vapor-liquid-solid process and the fabrication of Si nanowire-based humidity sensors. It was found that average length of Si nanowires decreased from 1.6 to 1 μ{\rm m}$ while the diameter of Si nanowires increased from 90 to 490 nm as we increased the initial Au catalytic layer thickness from 5 nm to 15 nm. It was also found that current measured from these Si nanowires decreased monotonically with RH. Furthermore, it was found that samples with a thinner Au layer thickness could provide a larger sensor response.

AB - The authors report the growth of Si nanowires on glass substrate by low-temperature vapor-liquid-solid process and the fabrication of Si nanowire-based humidity sensors. It was found that average length of Si nanowires decreased from 1.6 to 1 μ{\rm m}$ while the diameter of Si nanowires increased from 90 to 490 nm as we increased the initial Au catalytic layer thickness from 5 nm to 15 nm. It was also found that current measured from these Si nanowires decreased monotonically with RH. Furthermore, it was found that samples with a thinner Au layer thickness could provide a larger sensor response.

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Si nanowire-based humidity sensors prepared on glass substrate

Abstract

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