Side contact single electron devices for integrated circuit

Chomsik Lee, D. S. Choi, H. R. Park, C. S. Kim, K. L. Wang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A single electron transistor (SET) on SiGe/Si double-barrier structure has been studied with side contact. The progress of Si/SiGe vertical structure indicates that a new concept can be introduced to the Si-ultralarge scale integrated circuits field. In the Si/SiGe transistors, we can more easily control current flowing from drain to source by gate voltage than in any other three terminal devices. Drain and source regions are one dimensional, the well region (gate region) of device is zero dimensional with reverse gate bias. The resonant tunneling (one dimension to zero dimension, zero dimension to one dimension) and current-voltage curves are investigated in two-dimensional quantum model. The effect of delta doping results in shifting and reducing the peak value of transmission probabilities. We found a current enhancement in delta doped heterostructure at low temperatures. We calculate the posibility of Si single electron transistor in a two-dimensional simulation of the resonant tunneling transistor.

Original languageEnglish
Pages (from-to)S442-S446
JournalJournal of the Korean Physical Society
Volume39
Issue numberSUPPL. Part 1
Publication statusPublished - 2001 Dec

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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