Abstract
The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.
Original language | English |
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Pages (from-to) | 2046 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 67 |
DOIs | |
Publication status | Published - 1995 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)