Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Ching Ting Lee, Chang Da Tsai, Chi Yu Wang, Hung Pin Shiao, Tzer En Nee, Jia Nan Shen

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

Original languageEnglish
Pages (from-to)2046
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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