Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Ching Ting Lee; Chang Da Tsai; Chi Yu Wang; Hung Pin Shiao; Tzer En Nee; Jia Nan Shen

doi:10.1063/1.115073

Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Ching Ting Lee, Chang Da Tsai, Chi Yu Wang, Hung Pin Shiao, Tzer En Nee, Jia Nan Shen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

Original language	English
Pages (from-to)	2046
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115073
Publication status	Published - 1995

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure",

abstract = "The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.",

author = "Lee, {Ching Ting} and Tsai, {Chang Da} and Wang, {Chi Yu} and Shiao, {Hung Pin} and Nee, {Tzer En} and Shen, {Jia Nan}",

year = "1995",

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journal = "Applied Physics Letters",

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AU - Lee, Ching Ting

AU - Tsai, Chang Da

AU - Wang, Chi Yu

AU - Shiao, Hung Pin

AU - Nee, Tzer En

AU - Shen, Jia Nan

PY - 1995

Y1 - 1995

N2 - The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

AB - The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

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JF - Applied Physics Letters

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ER -

Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Abstract

All Science Journal Classification (ASJC) codes

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