Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Ching Ting Lee; Chang Da Tsai; Chi Yu Wang; Hung Pin Shiao; Tzer En Nee; Jia Nan Shen

doi:10.1063/1.115073

Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Ching Ting Lee, Chang Da Tsai, Chi Yu Wang, Hung Pin Shiao, Tzer En Nee, Jia Nan Shen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

Original language	English
Pages (from-to)	2046
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115073
Publication status	Published - 1995

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.115073

Cite this

@article{edb7f4f1734d4ae1bb5e56d42230005b,

title = "Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure",

abstract = "The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.",

author = "Lee, {Ching Ting} and Tsai, {Chang Da} and Wang, {Chi Yu} and Shiao, {Hung Pin} and Nee, {Tzer En} and Shen, {Jia Nan}",

year = "1995",

doi = "10.1063/1.115073",

language = "English",

volume = "67",

pages = "2046",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

AU - Lee, Ching Ting

AU - Tsai, Chang Da

AU - Wang, Chi Yu

AU - Shiao, Hung Pin

AU - Nee, Tzer En

AU - Shen, Jia Nan

PY - 1995

Y1 - 1995

N2 - The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

AB - The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

UR - http://www.scopus.com/inward/record.url?scp=0012214561&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012214561&partnerID=8YFLogxK

U2 - 10.1063/1.115073

DO - 10.1063/1.115073

M3 - Article

AN - SCOPUS:0012214561

VL - 67

SP - 2046

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -

Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this