SiGe band engineering for MOS, CMOS and quantum effect devices

K. L. Wang, S. G. Thomas, M. O. Tanner

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)


In this paper, we review recent progress in SiGe MOS technology. Progress in high mobility p-channel and n-channel devices will be presented as well as some of the materials and processing issues related to the fabrication of these heterostructures. In addition, we will present an outlook on the integration of these devices to complimentary MOS (CMOS) based on Si on Insulator technology (SOI). New directions of novel devices utilizing selective epitaxial growth and the integration of Si/Ge superlattices for enhanced performance in field effect transistors are described. Finally, we will examine some of the materials challenges of integrating SiGe technologies with current CMOS production processes.

Original languageEnglish
Pages (from-to)311-324
Number of pages14
JournalJournal of Materials Science: Materials in Electronics
Issue number5
Publication statusPublished - 1995 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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