SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation

K. H. Kao, A. S. Verhulst, R. Rooyackers, A. Hikavyy, E. Simoen, K. Arstila, B. Douhard, R. Loo, A. P. Milenin, J. Tolle, H. Dekkers, V. Machkaoutsan, J. W. Maes, K. De Meyer, N. Collaert, M. M. Heyns, C. Huyghebaert, A. Thean

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

For the purpose of calibrating the nonlocal Kane band-to-band tunneling model for Si1-xGex based on TCAD simulations, SiGe pi- n tunnel diodes are fabricated by epitaxial growth. The quality of the tunnel junction is examined by the ideality factors of the diodes and the band-to-band tunneling regime is determined based on activation energy extractions. By comparing experimental data to simulations with theoretically calculated prefactors of Kane's model, we conclude that the TCAD simulator overestimates the tunneling current in strained Si1-xGex diodes.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages965-970
Number of pages6
Edition9
DOIs
Publication statusPublished - 2012 Dec 1
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12-10-0712-10-12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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