SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation

K. H. Kao; A. S. Verhulst; R. Rooyackers; A. Hikavyy; E. Simoen; K. Arstila; B. Douhard; R. Loo; A. P. Milenin; J. Tolle; H. Dekkers; V. Machkaoutsan; J. W. Maes; K. De Meyer; N. Collaert; M. M. Heyns; C. Huyghebaert; A. Thean

doi:10.1149/05009.0965ecst

SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation

K. H. Kao, A. S. Verhulst, R. Rooyackers, A. Hikavyy, E. Simoen, K. Arstila, B. Douhard, R. Loo, A. P. Milenin, J. Tolle, H. Dekkers, V. Machkaoutsan, J. W. Maes, K. De Meyer, N. Collaert, M. M. Heyns, C. Huyghebaert, A. Thean

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

For the purpose of calibrating the nonlocal Kane band-to-band tunneling model for Si_1-xGe_x based on TCAD simulations, SiGe pi- n tunnel diodes are fabricated by epitaxial growth. The quality of the tunnel junction is examined by the ideality factors of the diodes and the band-to-band tunneling regime is determined based on activation energy extractions. By comparing experimental data to simulations with theoretically calculated prefactors of Kane's model, we conclude that the TCAD simulator overestimates the tunneling current in strained Si_1-xGe_x diodes.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Pages	965-970
Number of pages	6
Edition	9
DOIs	https://doi.org/10.1149/05009.0965ecst
Publication status	Published - 2012 Dec 1
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 2012 Oct 7 → 2012 Oct 12

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country	United States
City	Honolulu, HI
Period	12-10-07 → 12-10-12

All Science Journal Classification (ASJC) codes

Engineering(all)

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Kao, K. H., Verhulst, A. S., Rooyackers, R., Hikavyy, A., Simoen, E., Arstila, K., Douhard, B., Loo, R., Milenin, A. P., Tolle, J., Dekkers, H., Machkaoutsan, V., Maes, J. W., De Meyer, K., Collaert, N., Heyns, M. M., Huyghebaert, C., & Thean, A. (2012). SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 965-970). (ECS Transactions; Vol. 50, No. 9). https://doi.org/10.1149/05009.0965ecst

Kao, K. H. ; Verhulst, A. S. ; Rooyackers, R. ; Hikavyy, A. ; Simoen, E. ; Arstila, K. ; Douhard, B. ; Loo, R. ; Milenin, A. P. ; Tolle, J. ; Dekkers, H. ; Machkaoutsan, V. ; Maes, J. W. ; De Meyer, K. ; Collaert, N. ; Heyns, M. M. ; Huyghebaert, C. ; Thean, A. / SiGe band-to-band tunneling calibration based on p-i-n diodes : Fabrication, measurement and simulation. SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. 2012. pp. 965-970 (ECS Transactions; 9).

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title = "SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation",

abstract = "For the purpose of calibrating the nonlocal Kane band-to-band tunneling model for Si1-xGex based on TCAD simulations, SiGe pi- n tunnel diodes are fabricated by epitaxial growth. The quality of the tunnel junction is examined by the ideality factors of the diodes and the band-to-band tunneling regime is determined based on activation energy extractions. By comparing experimental data to simulations with theoretically calculated prefactors of Kane's model, we conclude that the TCAD simulator overestimates the tunneling current in strained Si1-xGex diodes.",

author = "Kao, {K. H.} and Verhulst, {A. S.} and R. Rooyackers and A. Hikavyy and E. Simoen and K. Arstila and B. Douhard and R. Loo and Milenin, {A. P.} and J. Tolle and H. Dekkers and V. Machkaoutsan and Maes, {J. W.} and {De Meyer}, K. and N. Collaert and Heyns, {M. M.} and C. Huyghebaert and A. Thean",

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series = "ECS Transactions",

number = "9",

pages = "965--970",

booktitle = "SiGe, Ge, and Related Compounds 5",

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note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

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Kao, KH, Verhulst, AS, Rooyackers, R, Hikavyy, A, Simoen, E, Arstila, K, Douhard, B, Loo, R, Milenin, AP, Tolle, J, Dekkers, H, Machkaoutsan, V, Maes, JW, De Meyer, K, Collaert, N, Heyns, MM, Huyghebaert, C & Thean, A 2012, SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, pp. 965-970, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 12-10-07. https://doi.org/10.1149/05009.0965ecst

SiGe band-to-band tunneling calibration based on p-i-n diodes : Fabrication, measurement and simulation. / Kao, K. H.; Verhulst, A. S.; Rooyackers, R.; Hikavyy, A.; Simoen, E.; Arstila, K.; Douhard, B.; Loo, R.; Milenin, A. P.; Tolle, J.; Dekkers, H.; Machkaoutsan, V.; Maes, J. W.; De Meyer, K.; Collaert, N.; Heyns, M. M.; Huyghebaert, C.; Thean, A.

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. 2012. p. 965-970 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - SiGe band-to-band tunneling calibration based on p-i-n diodes

T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting

AU - Kao, K. H.

AU - Verhulst, A. S.

AU - Rooyackers, R.

AU - Hikavyy, A.

AU - Simoen, E.

AU - Arstila, K.

AU - Douhard, B.

AU - Loo, R.

AU - Milenin, A. P.

AU - Tolle, J.

AU - Dekkers, H.

AU - Machkaoutsan, V.

AU - Maes, J. W.

AU - De Meyer, K.

AU - Collaert, N.

AU - Heyns, M. M.

AU - Huyghebaert, C.

AU - Thean, A.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - For the purpose of calibrating the nonlocal Kane band-to-band tunneling model for Si1-xGex based on TCAD simulations, SiGe pi- n tunnel diodes are fabricated by epitaxial growth. The quality of the tunnel junction is examined by the ideality factors of the diodes and the band-to-band tunneling regime is determined based on activation energy extractions. By comparing experimental data to simulations with theoretically calculated prefactors of Kane's model, we conclude that the TCAD simulator overestimates the tunneling current in strained Si1-xGex diodes.

AB - For the purpose of calibrating the nonlocal Kane band-to-band tunneling model for Si1-xGex based on TCAD simulations, SiGe pi- n tunnel diodes are fabricated by epitaxial growth. The quality of the tunnel junction is examined by the ideality factors of the diodes and the band-to-band tunneling regime is determined based on activation energy extractions. By comparing experimental data to simulations with theoretically calculated prefactors of Kane's model, we conclude that the TCAD simulator overestimates the tunneling current in strained Si1-xGex diodes.

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T3 - ECS Transactions

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EP - 970

BT - SiGe, Ge, and Related Compounds 5

Y2 - 7 October 2012 through 12 October 2012

ER -