@inproceedings{5337f15cfee54c8b8ef043c8d578bff1,
title = "SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation",
abstract = "For the purpose of calibrating the nonlocal Kane band-to-band tunneling model for Si1-xGex based on TCAD simulations, SiGe pi- n tunnel diodes are fabricated by epitaxial growth. The quality of the tunnel junction is examined by the ideality factors of the diodes and the band-to-band tunneling regime is determined based on activation energy extractions. By comparing experimental data to simulations with theoretically calculated prefactors of Kane's model, we conclude that the TCAD simulator overestimates the tunneling current in strained Si1-xGex diodes.",
author = "Kao, {K. H.} and Verhulst, {A. S.} and R. Rooyackers and A. Hikavyy and E. Simoen and K. Arstila and B. Douhard and R. Loo and Milenin, {A. P.} and J. Tolle and H. Dekkers and V. Machkaoutsan and Maes, {J. W.} and {De Meyer}, K. and N. Collaert and Heyns, {M. M.} and C. Huyghebaert and A. Thean",
year = "2012",
month = dec,
day = "1",
doi = "10.1149/05009.0965ecst",
language = "English",
isbn = "9781607683575",
series = "ECS Transactions",
number = "9",
pages = "965--970",
booktitle = "SiGe, Ge, and Related Compounds 5",
edition = "9",
note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",
}