Abstract
In this paper, we report, for the first time, the fabrication and characterization of Si/SiGe doped-channel field-effect transistors (DCFETs) using inductively coupled plasma (ICP) dry etching process. Because ICP can generate high-density plasma under low pressure, independently control plasma density as well as ion bombardment energy, a better anisotropic etching profile and the almost elimination the parasitic current path between isolated devices can be obtained. Experimental results show that the doped-channel FET using ICP mesa have higher breakdown voltage, lower leakage current, higher transconductance, and larger current drivability as compared to device fabricated using wet mesa etching.
Original language | English |
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Pages (from-to) | 222-224 |
Number of pages | 3 |
Journal | Materials Chemistry and Physics |
Volume | 103 |
Issue number | 2-3 |
DOIs | |
Publication status | Published - 2007 Jun 15 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics