SiGe doped-channel field-effect transistor

In this paper, we report, for the first time, the fabrication and characterization of Si/SiGe doped-channel field-effect transistors (DCFETs) using inductively coupled plasma (ICP) dry etching process. Because ICP can generate high-density plasma under low pressure, independently control plasma density as well as ion bombardment energy, a better anisotropic etching profile and the almost elimination the parasitic current path between isolated devices can be obtained. Experimental results show that the doped-channel FET using ICP mesa have higher breakdown voltage, lower leakage current, higher transconductance, and larger current drivability as compared to device fabricated using wet mesa etching.