SiGe heterostructure field-effect transistor using V-shaped confining potential well

Yu Min Lin, San Lein Wu, Shoou Jinn Chang, Shinji Koh, Yasuhiro Shiraki

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

A working p-type SiGe heterostructure field-effect transistor, utilizing a V-shaped confining potential well as the conducting channel, has been successfully fabricated. The upper boron δ-doping layer acts as a diffusion barrier to slow diffusion into the undoped Si cap layer. On the other hand, the bottom boron δ-doping layer prevents hot holes from escaping the channel by improving carrier confinement. It is found that when a V-shaped confining potential well is used as the conducting channel, the devices exhibit the excellent property not only of higher current density but also enhancement in extrinsic transconductance and linear operation range over a wider dynamic range than those of δ-doped devices for the same dose in SiGe conducting well. The measured transconductance is enhanced three to six tunes over that of the other δ cases.

Original languageEnglish
Pages (from-to)69-71
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number2
DOIs
Publication statusPublished - 2003 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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