TY - JOUR
T1 - SiGe heterostructure field-effect transistor using V-shaped confining potential well
AU - Lin, Yu Min
AU - Wu, San Lein
AU - Chang, Shoou Jinn
AU - Koh, Shinji
AU - Shiraki, Yasuhiro
N1 - Funding Information:
Manuscript received November 11, 2002. This work was supported by the National Science Council (NSC) of Taiwan, R.O.C., under Contract NSC90-2215-E-230-001. The review of this letter was arranged by Editor B. Yu. Y. M. Lin and S. J. Chang are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. (e-mail: [email protected]). S. L. Wu is with the Department of Electronic Engineering, Cheng-Shiu Institute of Technology, Kaohsiung, Taiwan, R.O.C. S. Koh and Y. Shiraki are with the Research Center for Advanced Science and Technology, University of Tokyo, Toyko 153-8904, Japan. Digital Object Identifier 10.1109/LED.2002.807709
PY - 2003/2
Y1 - 2003/2
N2 - A working p-type SiGe heterostructure field-effect transistor, utilizing a V-shaped confining potential well as the conducting channel, has been successfully fabricated. The upper boron δ-doping layer acts as a diffusion barrier to slow diffusion into the undoped Si cap layer. On the other hand, the bottom boron δ-doping layer prevents hot holes from escaping the channel by improving carrier confinement. It is found that when a V-shaped confining potential well is used as the conducting channel, the devices exhibit the excellent property not only of higher current density but also enhancement in extrinsic transconductance and linear operation range over a wider dynamic range than those of δ-doped devices for the same dose in SiGe conducting well. The measured transconductance is enhanced three to six tunes over that of the other δ cases.
AB - A working p-type SiGe heterostructure field-effect transistor, utilizing a V-shaped confining potential well as the conducting channel, has been successfully fabricated. The upper boron δ-doping layer acts as a diffusion barrier to slow diffusion into the undoped Si cap layer. On the other hand, the bottom boron δ-doping layer prevents hot holes from escaping the channel by improving carrier confinement. It is found that when a V-shaped confining potential well is used as the conducting channel, the devices exhibit the excellent property not only of higher current density but also enhancement in extrinsic transconductance and linear operation range over a wider dynamic range than those of δ-doped devices for the same dose in SiGe conducting well. The measured transconductance is enhanced three to six tunes over that of the other δ cases.
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U2 - 10.1109/LED.2002.807709
DO - 10.1109/LED.2002.807709
M3 - Article
AN - SCOPUS:0038732574
SN - 0741-3106
VL - 24
SP - 69
EP - 71
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 2
ER -