TY - JOUR
T1 - SiGe heterostucture field-effect transistor with ICP mesa treatments
AU - Lee, Chun Hsin
AU - Wu, San Lein
AU - Chang, Shoou Jinn
N1 - Funding Information:
The National Science Coucil (NSC) of Taiwan, R. O. C., supported this work under contract NSC92-2215-E-230-001.
PY - 2005/2
Y1 - 2005/2
N2 - Experimental realization of a Si/SiGe doped-channel field-effect transistors (DCFETs) using Ar+CF4 mixed-gas inductively coupled plasma (ICP) dry-etching process is reported for the first time. Due to generating high-density plasma under low pressure, independently controlled plasma density as well as ion bombardment energy for ICP technology, a better anisotropic etching profile, together with a higher etching rate, compared to the reactive ion etching (RIE) process, can be obtained. As compared to device fabricat using wet etching mesa, the doped-channel FET using ICP mesa is shown having higher breakdown voltage with lower leakage current, higher transconductance, and larger current drivability due to the elimination of most of the parasitic current path between isolated devices. Moreover, the ICP etching rate as a function of plasma relative composition on Si and Si 0.7Ge0.3 in Ar+CF4 mixed-discharge has been investigated. A high and stable etching selectivity between Si and SiGe can be obtained by ICP technology.
AB - Experimental realization of a Si/SiGe doped-channel field-effect transistors (DCFETs) using Ar+CF4 mixed-gas inductively coupled plasma (ICP) dry-etching process is reported for the first time. Due to generating high-density plasma under low pressure, independently controlled plasma density as well as ion bombardment energy for ICP technology, a better anisotropic etching profile, together with a higher etching rate, compared to the reactive ion etching (RIE) process, can be obtained. As compared to device fabricat using wet etching mesa, the doped-channel FET using ICP mesa is shown having higher breakdown voltage with lower leakage current, higher transconductance, and larger current drivability due to the elimination of most of the parasitic current path between isolated devices. Moreover, the ICP etching rate as a function of plasma relative composition on Si and Si 0.7Ge0.3 in Ar+CF4 mixed-discharge has been investigated. A high and stable etching selectivity between Si and SiGe can be obtained by ICP technology.
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U2 - 10.1016/j.mssp.2004.09.096
DO - 10.1016/j.mssp.2004.09.096
M3 - Article
AN - SCOPUS:13244249895
VL - 8
SP - 371
EP - 375
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 1-3 SPEC. ISS.
ER -