SiGe quantum dots prepared on an ordered mesoporous silica coated Si substrate

Y. S. Tang, S. Cai, G. Jin, J. Duan, K. L. Wang, H. M. Soyez, B. S. Dunn

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)

Abstract

This letter reports a new way of preparing wafer sized SiGe quantum dots on an ordered mesoporous sol gel silica coated Si. It was found from x-ray diffraction that very good regular layers of mesoscopic sized SiGe quantum dots can be formed in the silica. Initial low temperature photoluminescence measurements show much improved light emission of the buried dots. This technique is a potential low cost method for producing quantum dot arrays.

Original languageEnglish
Pages (from-to)2448-2450
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number17
DOIs
Publication statusPublished - 1997 Oct 27

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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