SiGe quantum dots prepared on an ordered mesoporous silica coated Si substrate

Y. S. Tang; S. Cai; G. Jin; J. Duan; K. L. Wang; H. M. Soyez; B. S. Dunn

doi:10.1063/1.120085

SiGe quantum dots prepared on an ordered mesoporous silica coated Si substrate

Y. S. Tang, S. Cai, G. Jin, J. Duan, K. L. Wang, H. M. Soyez, B. S. Dunn

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

This letter reports a new way of preparing wafer sized SiGe quantum dots on an ordered mesoporous sol gel silica coated Si. It was found from x-ray diffraction that very good regular layers of mesoscopic sized SiGe quantum dots can be formed in the silica. Initial low temperature photoluminescence measurements show much improved light emission of the buried dots. This technique is a potential low cost method for producing quantum dot arrays.

Original language	English
Pages (from-to)	2448-2450
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	17
DOIs	https://doi.org/10.1063/1.120085
Publication status	Published - 1997 Oct 27

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.120085

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@article{103734bb9e2b4b428073c250ab1f14bb,

title = "SiGe quantum dots prepared on an ordered mesoporous silica coated Si substrate",

abstract = "This letter reports a new way of preparing wafer sized SiGe quantum dots on an ordered mesoporous sol gel silica coated Si. It was found from x-ray diffraction that very good regular layers of mesoscopic sized SiGe quantum dots can be formed in the silica. Initial low temperature photoluminescence measurements show much improved light emission of the buried dots. This technique is a potential low cost method for producing quantum dot arrays.",

author = "Tang, {Y. S.} and S. Cai and G. Jin and J. Duan and Wang, {K. L.} and Soyez, {H. M.} and Dunn, {B. S.}",

year = "1997",

month = oct,

day = "27",

doi = "10.1063/1.120085",

language = "English",

volume = "71",

pages = "2448--2450",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - SiGe quantum dots prepared on an ordered mesoporous silica coated Si substrate

AU - Tang, Y. S.

AU - Cai, S.

AU - Jin, G.

AU - Duan, J.

AU - Wang, K. L.

AU - Soyez, H. M.

AU - Dunn, B. S.

PY - 1997/10/27

Y1 - 1997/10/27

N2 - This letter reports a new way of preparing wafer sized SiGe quantum dots on an ordered mesoporous sol gel silica coated Si. It was found from x-ray diffraction that very good regular layers of mesoscopic sized SiGe quantum dots can be formed in the silica. Initial low temperature photoluminescence measurements show much improved light emission of the buried dots. This technique is a potential low cost method for producing quantum dot arrays.

AB - This letter reports a new way of preparing wafer sized SiGe quantum dots on an ordered mesoporous sol gel silica coated Si. It was found from x-ray diffraction that very good regular layers of mesoscopic sized SiGe quantum dots can be formed in the silica. Initial low temperature photoluminescence measurements show much improved light emission of the buried dots. This technique is a potential low cost method for producing quantum dot arrays.

UR - http://www.scopus.com/inward/record.url?scp=0001532653&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001532653&partnerID=8YFLogxK

U2 - 10.1063/1.120085

DO - 10.1063/1.120085

M3 - Article

AN - SCOPUS:0001532653

SN - 0003-6951

VL - 71

SP - 2448

EP - 2450

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

SiGe quantum dots prepared on an ordered mesoporous silica coated Si substrate

Abstract

All Science Journal Classification (ASJC) codes

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