Signal processing with vertically-integrated resonant tunneling diodes

Robert C. Potter, Dave Shupe, Tai Haur Kuo, Hung Chang Lin

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Molecular-beam epitaxy was used to vertically integrate up to five InGaAs/InAlAs resonant tunneling structures. Devices processed from this heterostructure have five negative differential resistance (NDR) regions in the current-voltage (I-V) characteristic. One NDR region comes from the ground-state-transmission resonance in each tunneling structure. It is shown how the unique sawtooth-like I-V characteristics of this vertically integrated diode can be used for signal processing applications such as frequency multiplication, parity bit generation, and multilevel logic. An analog-to-digital (A/D) converter that is based on the vertically integrated diode is described. Simulations of this type of A/D converter show that it is capable of digitizing input signals with the digital output changing at a 30-GHz rate.

Original languageEnglish
Pages (from-to)2557-2561
Number of pages5
JournalProceedings - IEEE International Symposium on Circuits and Systems
Publication statusPublished - 1990 May
Event1990 IEEE International Symposium on Circuits and Systems Part 4 (of 4) - New Orleans, LA, USA
Duration: 1990 May 11990 May 3

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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