Signal processing with vertically-integrated resonant tunneling diodes

Robert C. Potter, Dave Shupe, Tai-Haur Kuo, Hung Chang Lin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Molecular-beam epitaxy was used to vertically integrate up to five InGaAs/InAlAs resonant tunneling structures. Devices processed from this heterostructure have five negative differential resistance (NDR) regions in the current-voltage (I-V) characteristic. One NDR region comes from the ground-state-transmission resonance in each tunneling structure. It is shown how the unique sawtooth-like I-V characteristics of this vertically integrated diode can be used for signal processing applications such as frequency multiplication, parity bit generation, and multilevel logic. An analog-to-digital (A/D) converter that is based on the vertically integrated diode is described. Simulations of this type of A/D converter show that it is capable of digitizing input signals with the digital output changing at a 30-GHz rate.

Original languageEnglish
Pages (from-to)2557-2561
Number of pages5
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume4
Publication statusPublished - 1990 May

Fingerprint

Resonant tunneling diodes
Digital to analog conversion
Current voltage characteristics
Signal processing
Diodes
Resonant tunneling
Molecular beam epitaxy
Ground state
Heterojunctions

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

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abstract = "Molecular-beam epitaxy was used to vertically integrate up to five InGaAs/InAlAs resonant tunneling structures. Devices processed from this heterostructure have five negative differential resistance (NDR) regions in the current-voltage (I-V) characteristic. One NDR region comes from the ground-state-transmission resonance in each tunneling structure. It is shown how the unique sawtooth-like I-V characteristics of this vertically integrated diode can be used for signal processing applications such as frequency multiplication, parity bit generation, and multilevel logic. An analog-to-digital (A/D) converter that is based on the vertically integrated diode is described. Simulations of this type of A/D converter show that it is capable of digitizing input signals with the digital output changing at a 30-GHz rate.",
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Signal processing with vertically-integrated resonant tunneling diodes. / Potter, Robert C.; Shupe, Dave; Kuo, Tai-Haur; Lin, Hung Chang.

In: Proceedings - IEEE International Symposium on Circuits and Systems, Vol. 4, 05.1990, p. 2557-2561.

Research output: Contribution to journalArticle

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