Abstract
Molecular-beam epitaxy was used to vertically integrate up to five InGaAs/InAlAs resonant tunneling structures. Devices processed from this heterostructure have five negative differential resistance (NDR) regions in the current-voltage (I-V) characteristic. One NDR region comes from the ground-state-transmission resonance in each tunneling structure. It is shown how the unique sawtooth-like I-V characteristics of this vertically integrated diode can be used for signal processing applications such as frequency multiplication, parity bit generation, and multilevel logic. An analog-to-digital (A/D) converter that is based on the vertically integrated diode is described. Simulations of this type of A/D converter show that it is capable of digitizing input signals with the digital output changing at a 30-GHz rate.
| Original language | English |
|---|---|
| Pages (from-to) | 2557-2561 |
| Number of pages | 5 |
| Journal | Proceedings - IEEE International Symposium on Circuits and Systems |
| Volume | 4 |
| Publication status | Published - 1990 May |
| Event | 1990 IEEE International Symposium on Circuits and Systems Part 4 (of 4) - New Orleans, LA, USA Duration: 1990 May 1 → 1990 May 3 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering