Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation

Kunal Kumar, Yu Feng Hsieh, Jen Hong Liao, Kuo Hsing Kao, Yeong Her Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

It is well known that there is a critical Sn content for a GeSn alloy, at which the conduction band edges at L and Γ symmetry points are aligned in energy. For GeSn tunnel FET (TFET) simulations, with a given donor concentration, this paper reveals that simulations neglecting the multivalley and nonparabolic band structure would incorrectly predict the subthreshold slope (SS) and the off-currents. We highlight the indispensability of the consideration of the multivalley band structure of GeSn for TFET simulations. This paper provides the required parameters, which may be useful for numerical simulations of other optoelectronic and electronic GeSn devices.

Original languageEnglish
Article number8445683
Pages (from-to)4709-4715
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume65
Issue number10
DOIs
Publication statusPublished - 2018 Oct

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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