Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation

Kunal Kumar; Yu Feng Hsieh; Jen Hong Liao; Kuo Hsing Kao; Yeong Her Wang

doi:10.1109/TED.2018.2864544

Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation

Kunal Kumar, Yu Feng Hsieh, Jen Hong Liao, Kuo Hsing Kao, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

It is well known that there is a critical Sn content for a GeSn alloy, at which the conduction band edges at L and Γ symmetry points are aligned in energy. For GeSn tunnel FET (TFET) simulations, with a given donor concentration, this paper reveals that simulations neglecting the multivalley and nonparabolic band structure would incorrectly predict the subthreshold slope (SS) and the off-currents. We highlight the indispensability of the consideration of the multivalley band structure of GeSn for TFET simulations. This paper provides the required parameters, which may be useful for numerical simulations of other optoelectronic and electronic GeSn devices.

Original language	English
Article number	8445683
Pages (from-to)	4709-4715
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	10
DOIs	https://doi.org/10.1109/TED.2018.2864544
Publication status	Published - 2018 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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author = "Kunal Kumar and Hsieh, {Yu Feng} and Liao, {Jen Hong} and Kao, {Kuo Hsing} and Wang, {Yeong Her}",

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AU - Wang, Yeong Her

PY - 2018/10

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