Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation

Kunal Kumar; Yu Feng Hsieh; Jen Hong Liao; Kuo Hsing Kao; Yeong Her Wang

doi:10.1109/TED.2018.2864544

Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation

Kunal Kumar, Yu Feng Hsieh, Jen Hong Liao, Kuo Hsing Kao, Yeong Her Wang

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

It is well known that there is a critical Sn content for a GeSn alloy, at which the conduction band edges at L and Γ symmetry points are aligned in energy. For GeSn tunnel FET (TFET) simulations, with a given donor concentration, this paper reveals that simulations neglecting the multivalley and nonparabolic band structure would incorrectly predict the subthreshold slope (SS) and the off-currents. We highlight the indispensability of the consideration of the multivalley band structure of GeSn for TFET simulations. This paper provides the required parameters, which may be useful for numerical simulations of other optoelectronic and electronic GeSn devices.

Original language	English
Article number	8445683
Pages (from-to)	4709-4715
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	10
DOIs	https://doi.org/10.1109/TED.2018.2864544
Publication status	Published - 2018 Oct

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Kumar, K., Hsieh, Y. F., Liao, J. H., Kao, K. H., & Wang, Y. H. (2018). Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation. IEEE Transactions on Electron Devices, 65(10), 4709-4715. [8445683]. https://doi.org/10.1109/TED.2018.2864544

@article{da71c02db2f4428abaf1faa09d4c3f8e,

title = "Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation",

abstract = "It is well known that there is a critical Sn content for a GeSn alloy, at which the conduction band edges at L and Γ symmetry points are aligned in energy. For GeSn tunnel FET (TFET) simulations, with a given donor concentration, this paper reveals that simulations neglecting the multivalley and nonparabolic band structure would incorrectly predict the subthreshold slope (SS) and the off-currents. We highlight the indispensability of the consideration of the multivalley band structure of GeSn for TFET simulations. This paper provides the required parameters, which may be useful for numerical simulations of other optoelectronic and electronic GeSn devices.",

author = "Kunal Kumar and Hsieh, {Yu Feng} and Liao, {Jen Hong} and Kao, {Kuo Hsing} and Wang, {Yeong Her}",

year = "2018",

month = oct

doi = "10.1109/TED.2018.2864544",

language = "English",

volume = "65",

pages = "4709--4715",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation

AU - Kumar, Kunal

AU - Hsieh, Yu Feng

AU - Liao, Jen Hong

AU - Kao, Kuo Hsing

AU - Wang, Yeong Her

PY - 2018/10

Y1 - 2018/10

N2 - It is well known that there is a critical Sn content for a GeSn alloy, at which the conduction band edges at L and Γ symmetry points are aligned in energy. For GeSn tunnel FET (TFET) simulations, with a given donor concentration, this paper reveals that simulations neglecting the multivalley and nonparabolic band structure would incorrectly predict the subthreshold slope (SS) and the off-currents. We highlight the indispensability of the consideration of the multivalley band structure of GeSn for TFET simulations. This paper provides the required parameters, which may be useful for numerical simulations of other optoelectronic and electronic GeSn devices.

AB - It is well known that there is a critical Sn content for a GeSn alloy, at which the conduction band edges at L and Γ symmetry points are aligned in energy. For GeSn tunnel FET (TFET) simulations, with a given donor concentration, this paper reveals that simulations neglecting the multivalley and nonparabolic band structure would incorrectly predict the subthreshold slope (SS) and the off-currents. We highlight the indispensability of the consideration of the multivalley band structure of GeSn for TFET simulations. This paper provides the required parameters, which may be useful for numerical simulations of other optoelectronic and electronic GeSn devices.

UR - http://www.scopus.com/inward/record.url?scp=85052697533&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052697533&partnerID=8YFLogxK

U2 - 10.1109/TED.2018.2864544

DO - 10.1109/TED.2018.2864544

M3 - Article

AN - SCOPUS:85052697533

VL - 65

SP - 4709

EP - 4715

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

M1 - 8445683

ER -

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10.1109/TED.2018.2864544