SiH4-doped AlGaAs epilayers formed by MOCVD

H. M. Shieh, T. S. Wu, W. C. Hsu

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5 Citations (Scopus)

Abstract

Silane-doped AlGaAs epilayers have been grown by metalorganic chemical vapor deposition (MOCVD). The poor efficiency of SiH4 doped in AlxGa1-xAs rich in Al(x > 0.2) is discussed in detail. The electron carrier concentration has been raised about 39 times for Al0.38Ga0.62As by increasing the V/III ratio and the growth temperature, and using the δ-doping method. The influence of δ-doping on the electron carrier concentration and the growth rate was studied and new models and interpretation are proposed.

Original languageEnglish
Pages (from-to)665-670
Number of pages6
JournalJournal of Crystal Growth
Volume121
Issue number4
DOIs
Publication statusPublished - 1992 Aug 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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