Silane-doped AlGaAs epilayers have been grown by metalorganic chemical vapor deposition (MOCVD). The poor efficiency of SiH4 doped in AlxGa1-xAs rich in Al(x > 0.2) is discussed in detail. The electron carrier concentration has been raised about 39 times for Al0.38Ga0.62As by increasing the V/III ratio and the growth temperature, and using the δ-doping method. The influence of δ-doping on the electron carrier concentration and the growth rate was studied and new models and interpretation are proposed.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry