SiH4-doped AlGaAs epilayers formed by MOCVD

H. M. Shieh; T. S. Wu; W. C. Hsu

doi:10.1016/0022-0248(92)90573-2

SiH₄-doped AlGaAs epilayers formed by MOCVD

H. M. Shieh
, T. S. Wu
, W. C. Hsu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Silane-doped AlGaAs epilayers have been grown by metalorganic chemical vapor deposition (MOCVD). The poor efficiency of SiH₄ doped in Al_xGa_1-xAs rich in Al(x > 0.2) is discussed in detail. The electron carrier concentration has been raised about 39 times for Al_0.38Ga_0.62As by increasing the V/III ratio and the growth temperature, and using the δ-doping method. The influence of δ-doping on the electron carrier concentration and the growth rate was studied and new models and interpretation are proposed.

Original language	English
Pages (from-to)	665-670
Number of pages	6
Journal	Journal of Crystal Growth
Volume	121
Issue number	4
DOIs	https://doi.org/10.1016/0022-0248(92)90573-2
Publication status	Published - 1992 Aug 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(92)90573-2

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title = "SiH4-doped AlGaAs epilayers formed by MOCVD",

abstract = "Silane-doped AlGaAs epilayers have been grown by metalorganic chemical vapor deposition (MOCVD). The poor efficiency of SiH4 doped in AlxGa1-xAs rich in Al(x > 0.2) is discussed in detail. The electron carrier concentration has been raised about 39 times for Al0.38Ga0.62As by increasing the V/III ratio and the growth temperature, and using the δ-doping method. The influence of δ-doping on the electron carrier concentration and the growth rate was studied and new models and interpretation are proposed.",

author = "Shieh, \{H. M.\} and Wu, \{T. S.\} and Hsu, \{W. C.\}",

year = "1992",

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language = "English",

volume = "121",

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T1 - SiH4-doped AlGaAs epilayers formed by MOCVD

AU - Shieh, H. M.

AU - Wu, T. S.

AU - Hsu, W. C.

PY - 1992/8/1

Y1 - 1992/8/1

N2 - Silane-doped AlGaAs epilayers have been grown by metalorganic chemical vapor deposition (MOCVD). The poor efficiency of SiH4 doped in AlxGa1-xAs rich in Al(x > 0.2) is discussed in detail. The electron carrier concentration has been raised about 39 times for Al0.38Ga0.62As by increasing the V/III ratio and the growth temperature, and using the δ-doping method. The influence of δ-doping on the electron carrier concentration and the growth rate was studied and new models and interpretation are proposed.

AB - Silane-doped AlGaAs epilayers have been grown by metalorganic chemical vapor deposition (MOCVD). The poor efficiency of SiH4 doped in AlxGa1-xAs rich in Al(x > 0.2) is discussed in detail. The electron carrier concentration has been raised about 39 times for Al0.38Ga0.62As by increasing the V/III ratio and the growth temperature, and using the δ-doping method. The influence of δ-doping on the electron carrier concentration and the growth rate was studied and new models and interpretation are proposed.

UR - https://www.scopus.com/pages/publications/0026907914

UR - https://www.scopus.com/pages/publications/0026907914#tab=citedBy

U2 - 10.1016/0022-0248(92)90573-2

DO - 10.1016/0022-0248(92)90573-2

M3 - Article

AN - SCOPUS:0026907914

SN - 0022-0248

VL - 121

SP - 665

EP - 670

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

SiH₄-doped AlGaAs epilayers formed by MOCVD

Abstract

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