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SiH
4
-doped AlGaAs epilayers formed by MOCVD
H. M. Shieh, T. S. Wu,
W. C. Hsu
Institute of Microelectronics
Master Degree Program on Nano-Integrated-Circuit Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
2
Citations (Scopus)
Overview
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4
-doped AlGaAs epilayers formed by MOCVD'. Together they form a unique fingerprint.
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Engineering & Materials Science
Carrier concentration
83%
Doping (additives)
65%
Electrons
59%
Epilayers
100%
Growth temperature
47%
Metallorganic chemical vapor deposition
92%
Silanes
37%
Physics & Astronomy
aluminum gallium arsenides
55%
electrons
24%
metalorganic chemical vapor deposition
55%
silanes
31%
temperature
8%
Chemical Compounds
Chemical Vapour Deposition
52%
Electron Particle
31%
Time
10%