Silated acidic copolymers for nanoimprint lithography on flexible plastic substrates

Wen chang Liao, Lien-Chung Hsu, Jui Chen Lin

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A new silated acidic polymer was developed as the resist for nanoimprint lithography on flexible substrates. This polymer was synthesized from methylmethacrylate, n-butylacrylate, methacrylic acid and 3-[tris(trimethylsiloxy)silyl]propyl methacrylate by free radical copolymerization with an azobisisobutyronitrile (AIBN) initiator at 90 °C. The resist has excellent reactive ion etching (RIE) resistability, a lower Tg (43 °C) compared to poly(methyl methacrylate) (PMMA) and good flowability. It is suitable to use on flexible plastic substrates. The resist can be easily removed by an aqueous base solution at the final stripping step, instead of using an organic solvent or RIE. A 100 nm/50 nm (line/space) feature pattern was obtained on a flexible polyethylene terephthalate (PET)/ITO substrate.

Original languageEnglish
Pages (from-to)129-135
Number of pages7
JournalMicroelectronic Engineering
Volume84
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

Nanoimprint lithography
copolymers
plastics
lithography
Copolymers
Reactive ion etching
Plastics
Polymers
Substrates
etching
Methylmethacrylate
Polyethylene Terephthalates
Methacrylates
polyethylene terephthalate
polymers
copolymerization
Polymethyl Methacrylate
initiators
stripping
ITO (semiconductors)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{86e54f43fbb64c1788efedc8b255dcaf,
title = "Silated acidic copolymers for nanoimprint lithography on flexible plastic substrates",
abstract = "A new silated acidic polymer was developed as the resist for nanoimprint lithography on flexible substrates. This polymer was synthesized from methylmethacrylate, n-butylacrylate, methacrylic acid and 3-[tris(trimethylsiloxy)silyl]propyl methacrylate by free radical copolymerization with an azobisisobutyronitrile (AIBN) initiator at 90 °C. The resist has excellent reactive ion etching (RIE) resistability, a lower Tg (43 °C) compared to poly(methyl methacrylate) (PMMA) and good flowability. It is suitable to use on flexible plastic substrates. The resist can be easily removed by an aqueous base solution at the final stripping step, instead of using an organic solvent or RIE. A 100 nm/50 nm (line/space) feature pattern was obtained on a flexible polyethylene terephthalate (PET)/ITO substrate.",
author = "Liao, {Wen chang} and Lien-Chung Hsu and Lin, {Jui Chen}",
year = "2007",
month = "1",
day = "1",
doi = "10.1016/j.mee.2006.09.002",
language = "English",
volume = "84",
pages = "129--135",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "1",

}

Silated acidic copolymers for nanoimprint lithography on flexible plastic substrates. / Liao, Wen chang; Hsu, Lien-Chung; Lin, Jui Chen.

In: Microelectronic Engineering, Vol. 84, No. 1, 01.01.2007, p. 129-135.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Silated acidic copolymers for nanoimprint lithography on flexible plastic substrates

AU - Liao, Wen chang

AU - Hsu, Lien-Chung

AU - Lin, Jui Chen

PY - 2007/1/1

Y1 - 2007/1/1

N2 - A new silated acidic polymer was developed as the resist for nanoimprint lithography on flexible substrates. This polymer was synthesized from methylmethacrylate, n-butylacrylate, methacrylic acid and 3-[tris(trimethylsiloxy)silyl]propyl methacrylate by free radical copolymerization with an azobisisobutyronitrile (AIBN) initiator at 90 °C. The resist has excellent reactive ion etching (RIE) resistability, a lower Tg (43 °C) compared to poly(methyl methacrylate) (PMMA) and good flowability. It is suitable to use on flexible plastic substrates. The resist can be easily removed by an aqueous base solution at the final stripping step, instead of using an organic solvent or RIE. A 100 nm/50 nm (line/space) feature pattern was obtained on a flexible polyethylene terephthalate (PET)/ITO substrate.

AB - A new silated acidic polymer was developed as the resist for nanoimprint lithography on flexible substrates. This polymer was synthesized from methylmethacrylate, n-butylacrylate, methacrylic acid and 3-[tris(trimethylsiloxy)silyl]propyl methacrylate by free radical copolymerization with an azobisisobutyronitrile (AIBN) initiator at 90 °C. The resist has excellent reactive ion etching (RIE) resistability, a lower Tg (43 °C) compared to poly(methyl methacrylate) (PMMA) and good flowability. It is suitable to use on flexible plastic substrates. The resist can be easily removed by an aqueous base solution at the final stripping step, instead of using an organic solvent or RIE. A 100 nm/50 nm (line/space) feature pattern was obtained on a flexible polyethylene terephthalate (PET)/ITO substrate.

UR - http://www.scopus.com/inward/record.url?scp=33751428370&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751428370&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2006.09.002

DO - 10.1016/j.mee.2006.09.002

M3 - Article

VL - 84

SP - 129

EP - 135

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1

ER -