Silicon light emissions from boron implant-induced defect engineering

G. Z. Pan; R. P. Ostroumov; L. P. Ren; Y. G. Lian; K. L. Wang

doi:10.1016/j.jnoncrysol.2006.02.083

Silicon light emissions from boron implant-induced defect engineering

G. Z. Pan, R. P. Ostroumov, L. P. Ren, Y. G. Lian, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

We studied the electroluminescence of boron-implanted p-n junction silicon light emitting-diodes (Si LEDs) engineered with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {1 1 3} defects along Si〈1 1 0〉 are the ones that result in strong silicon light emission of the p-n junction Si LEDs other than {1 1 1} perfect prismatic and {1 1 1} faulted Frank dislocation loops. The electroluminescence peak intensity at about 1.1 eV of {1 1 3} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs.

Original language	English
Pages (from-to)	2506-2509
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	352
Issue number	23-25
DOIs	https://doi.org/10.1016/j.jnoncrysol.2006.02.083
Publication status	Published - 2006 Jul 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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@article{3115c7d72fbc4f24a002b7e5386ce006,

title = "Silicon light emissions from boron implant-induced defect engineering",

abstract = "We studied the electroluminescence of boron-implanted p-n junction silicon light emitting-diodes (Si LEDs) engineered with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {1 1 3} defects along Si〈1 1 0〉 are the ones that result in strong silicon light emission of the p-n junction Si LEDs other than {1 1 1} perfect prismatic and {1 1 1} faulted Frank dislocation loops. The electroluminescence peak intensity at about 1.1 eV of {1 1 3} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs.",

author = "Pan, {G. Z.} and Ostroumov, {R. P.} and Ren, {L. P.} and Lian, {Y. G.} and Wang, {K. L.}",

note = "Funding Information: This work is supported in part by US Air Force Office of Scientific Research under a contract NO. FA9550-04-C-0101 with Global Nanosystems, Inc. and the University of California at Los Angeles. ",

year = "2006",

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doi = "10.1016/j.jnoncrysol.2006.02.083",

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TY - JOUR

T1 - Silicon light emissions from boron implant-induced defect engineering

AU - Pan, G. Z.

AU - Ostroumov, R. P.

AU - Ren, L. P.

AU - Lian, Y. G.

AU - Wang, K. L.

N1 - Funding Information: This work is supported in part by US Air Force Office of Scientific Research under a contract NO. FA9550-04-C-0101 with Global Nanosystems, Inc. and the University of California at Los Angeles.

PY - 2006/7/15

Y1 - 2006/7/15

N2 - We studied the electroluminescence of boron-implanted p-n junction silicon light emitting-diodes (Si LEDs) engineered with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {1 1 3} defects along Si〈1 1 0〉 are the ones that result in strong silicon light emission of the p-n junction Si LEDs other than {1 1 1} perfect prismatic and {1 1 1} faulted Frank dislocation loops. The electroluminescence peak intensity at about 1.1 eV of {1 1 3} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs.

AB - We studied the electroluminescence of boron-implanted p-n junction silicon light emitting-diodes (Si LEDs) engineered with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {1 1 3} defects along Si〈1 1 0〉 are the ones that result in strong silicon light emission of the p-n junction Si LEDs other than {1 1 1} perfect prismatic and {1 1 1} faulted Frank dislocation loops. The electroluminescence peak intensity at about 1.1 eV of {1 1 3} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs.

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