Silicon light emissions from boron implant-induced defect engineering

G. Z. Pan, R. P. Ostroumov, L. P. Ren, Y. G. Lian, K. L. Wang

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We studied the electroluminescence of boron-implanted p-n junction silicon light emitting-diodes (Si LEDs) engineered with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {1 1 3} defects along Si〈1 1 0〉 are the ones that result in strong silicon light emission of the p-n junction Si LEDs other than {1 1 1} perfect prismatic and {1 1 1} faulted Frank dislocation loops. The electroluminescence peak intensity at about 1.1 eV of {1 1 3} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs.

Original languageEnglish
Pages (from-to)2506-2509
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue number23-25
Publication statusPublished - 2006 Jul 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry


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