Abstract
We studied the electroluminescence of boron-implanted p-n junction silicon light emitting-diodes (Si LEDs) engineered with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {1 1 3} defects along Si〈1 1 0〉 are the ones that result in strong silicon light emission of the p-n junction Si LEDs other than {1 1 1} perfect prismatic and {1 1 1} faulted Frank dislocation loops. The electroluminescence peak intensity at about 1.1 eV of {1 1 3} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs.
Original language | English |
---|---|
Pages (from-to) | 2506-2509 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 352 |
Issue number | 23-25 |
DOIs | |
Publication status | Published - 2006 Jul 15 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry