Silicon light emissions from boron implant-induced extended defects

G. Z. Pan, R. P. Ostroumov, L. P. Ren, Y. G. Lian, K. L. Wang

Research output: Contribution to journalConference articlepeer-review

Abstract

We studied the electroluminescence (EL) of boron-implanted p-n junction Si LEDs in correlation with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {113} defects along Sil 〈10〉 are the ones that result in strong silicon light emission of the p-n junction Si LEDs other than {111} perfect prismatic and {111} faulted Frank dislocation loops. The EL peak intensity at about 1.1 eV of {113} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs. The EL measured at temperatures from room temperature to 4 K indicated that the emissions related to the extended defects are from silicon band edge radiative recombination.

Original languageEnglish
Article numberE6.4
Pages (from-to)247-252
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume864
DOIs
Publication statusPublished - 2005
Event2005 materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: 2005 Mar 282005 Apr 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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