Silicon Mach-Zehnder waveguide interferometer on silicon-on-silicon (SOS) substrate incorporating the integrated three-terminal field-effect device as an optical signal modulation structure

Wen-Kuei Chuang, Mao Teng Hsu, Shen Horng Chou, Yao Jen Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Silicon Mach-Zehnder interferometric (MZI) waveguide modulator incorporating the n-channel junction field-effect transistor (JFET) as a signal modulation unit was designed, fabricated, and analyzed. The proposed MZI with JFET was designed to operate based on the plasma dispersion effect in the infrared wavelength of 1550 nm. The three different modulation lengths (ML) of 500, 1000, and 2000μm while keeping the overall MZI length constant at 1.5 cm were set as a general design rule for these 10μm-wide MZIs under study. When the JFET was operated in an active mode by injecting approximately 50 mA current (Is) to achieve a π phase shift, the modulation efficiency of the device was measured to be η = π/(Is·L) ≃ 40π/A-mm. The temporal and frequency response measurements also demonstrate that the respectively rise and fall times measured using a high-speed photoreceiver were in the neighborhood of 8.5 and 7.5μsec and the 3 dB roll-off frequency (f3 dB) measured was in the excess of ∼400 kHz.

Original languageEnglish
Pages (from-to)1173-1178
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE94-C
Issue number7
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

Silicon
Field effect transistors
Interferometers
Mach number
Waveguides
Modulation
Substrates
Phase shift
Modulators
Frequency response
Infrared radiation
Plasmas
Wavelength

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "Silicon Mach-Zehnder waveguide interferometer on silicon-on-silicon (SOS) substrate incorporating the integrated three-terminal field-effect device as an optical signal modulation structure",
abstract = "Silicon Mach-Zehnder interferometric (MZI) waveguide modulator incorporating the n-channel junction field-effect transistor (JFET) as a signal modulation unit was designed, fabricated, and analyzed. The proposed MZI with JFET was designed to operate based on the plasma dispersion effect in the infrared wavelength of 1550 nm. The three different modulation lengths (ML) of 500, 1000, and 2000μm while keeping the overall MZI length constant at 1.5 cm were set as a general design rule for these 10μm-wide MZIs under study. When the JFET was operated in an active mode by injecting approximately 50 mA current (Is) to achieve a π phase shift, the modulation efficiency of the device was measured to be η = π/(Is·L) ≃ 40π/A-mm. The temporal and frequency response measurements also demonstrate that the respectively rise and fall times measured using a high-speed photoreceiver were in the neighborhood of 8.5 and 7.5μsec and the 3 dB roll-off frequency (f3 dB) measured was in the excess of ∼400 kHz.",
author = "Wen-Kuei Chuang and Hsu, {Mao Teng} and Chou, {Shen Horng} and Lee, {Yao Jen}",
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AU - Hsu, Mao Teng

AU - Chou, Shen Horng

AU - Lee, Yao Jen

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N2 - Silicon Mach-Zehnder interferometric (MZI) waveguide modulator incorporating the n-channel junction field-effect transistor (JFET) as a signal modulation unit was designed, fabricated, and analyzed. The proposed MZI with JFET was designed to operate based on the plasma dispersion effect in the infrared wavelength of 1550 nm. The three different modulation lengths (ML) of 500, 1000, and 2000μm while keeping the overall MZI length constant at 1.5 cm were set as a general design rule for these 10μm-wide MZIs under study. When the JFET was operated in an active mode by injecting approximately 50 mA current (Is) to achieve a π phase shift, the modulation efficiency of the device was measured to be η = π/(Is·L) ≃ 40π/A-mm. The temporal and frequency response measurements also demonstrate that the respectively rise and fall times measured using a high-speed photoreceiver were in the neighborhood of 8.5 and 7.5μsec and the 3 dB roll-off frequency (f3 dB) measured was in the excess of ∼400 kHz.

AB - Silicon Mach-Zehnder interferometric (MZI) waveguide modulator incorporating the n-channel junction field-effect transistor (JFET) as a signal modulation unit was designed, fabricated, and analyzed. The proposed MZI with JFET was designed to operate based on the plasma dispersion effect in the infrared wavelength of 1550 nm. The three different modulation lengths (ML) of 500, 1000, and 2000μm while keeping the overall MZI length constant at 1.5 cm were set as a general design rule for these 10μm-wide MZIs under study. When the JFET was operated in an active mode by injecting approximately 50 mA current (Is) to achieve a π phase shift, the modulation efficiency of the device was measured to be η = π/(Is·L) ≃ 40π/A-mm. The temporal and frequency response measurements also demonstrate that the respectively rise and fall times measured using a high-speed photoreceiver were in the neighborhood of 8.5 and 7.5μsec and the 3 dB roll-off frequency (f3 dB) measured was in the excess of ∼400 kHz.

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