TY - GEN
T1 - Silicon nanowire temperature sensor and its characteristic
AU - Wang, Chuan Po
AU - Liu, Chien Wei
AU - Gau, Chie
PY - 2011
Y1 - 2011
N2 - silicon nanowires (SiNWs) with well orientation and crystallization are synthesized by the vapor-liquid-solid (VLS) process, and doped as n-type by an ex situ process using spin on dopant (SOD) technique. The ex situ doping process using SOD was based on solid-state diffusion, which comprised two stages: pre-coating and drive in. The phosphorous concentration in SiNWs was controlled by appropriate selections of the drive in temperature and the time period, which are 950 °C and 5-60 min in the present studies. The doped nanowire can be readily made into a temperature sensor with much better resolution and response. Calibration of the SiNW temperature sensor at different doping level has been performed. With a concentration of 4 × 1015 atoms/cm 3 the SiNW sensor has the best temperature resolution (6186 Ω/ °C) and sensitivity in this study.
AB - silicon nanowires (SiNWs) with well orientation and crystallization are synthesized by the vapor-liquid-solid (VLS) process, and doped as n-type by an ex situ process using spin on dopant (SOD) technique. The ex situ doping process using SOD was based on solid-state diffusion, which comprised two stages: pre-coating and drive in. The phosphorous concentration in SiNWs was controlled by appropriate selections of the drive in temperature and the time period, which are 950 °C and 5-60 min in the present studies. The doped nanowire can be readily made into a temperature sensor with much better resolution and response. Calibration of the SiNW temperature sensor at different doping level has been performed. With a concentration of 4 × 1015 atoms/cm 3 the SiNW sensor has the best temperature resolution (6186 Ω/ °C) and sensitivity in this study.
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U2 - 10.1109/NEMS.2011.6017434
DO - 10.1109/NEMS.2011.6017434
M3 - Conference contribution
AN - SCOPUS:80053324440
SN - 9781612847757
T3 - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
SP - 630
EP - 633
BT - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
T2 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
Y2 - 20 February 2011 through 23 February 2011
ER -