Silicon nanowire temperature sensor and its characteristic

Chuan Po Wang, Chien Wei Liu, Chie Gau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

silicon nanowires (SiNWs) with well orientation and crystallization are synthesized by the vapor-liquid-solid (VLS) process, and doped as n-type by an ex situ process using spin on dopant (SOD) technique. The ex situ doping process using SOD was based on solid-state diffusion, which comprised two stages: pre-coating and drive in. The phosphorous concentration in SiNWs was controlled by appropriate selections of the drive in temperature and the time period, which are 950 °C and 5-60 min in the present studies. The doped nanowire can be readily made into a temperature sensor with much better resolution and response. Calibration of the SiNW temperature sensor at different doping level has been performed. With a concentration of 4 × 1015 atoms/cm 3 the SiNW sensor has the best temperature resolution (6186 Ω/ °C) and sensitivity in this study.

Original languageEnglish
Title of host publicationNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Pages630-633
Number of pages4
DOIs
Publication statusPublished - 2011 Oct 4
Event6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan
Duration: 2011 Feb 202011 Feb 23

Publication series

NameNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Other

Other6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
CountryTaiwan
CityKaohsiung
Period11-02-2011-02-23

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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