Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates

Mao Teng Hsu, Wen-Kuei Chuang, Jia Ching Liao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The fabrication and characterization of the p-i-n optical waveguide modulators on silicon-on-insulator (SOI) substrate were demonstrated. The modulation was based on the mechanism of carrier injection, or plasma dispersion effect. The corresponding p and n regions were defined in both types of silicon substrates (conventional p-doped and highly resistive SOI substrates with respective resistivities of ρ∼7-10Ω-cm and ρ∼7000- 10000Ωcm) using the spin-on-dopant (SOD) technique. The SOD diffusion process was conducted at 900-1000°C in nitrogen ambient. The diffusion time and temperature, and the resistivity of SOI substrate used were the primary parameters dictating the resultant dopant concentrations and diffusion depths. For the modulators fabricated with various waveguide widths and electrode lengths, the corresponding modulation index was enhanced in response to an increase in the electrode (or modulation) length and/or a decrease in waveguide width. The highest modulation index of ∼4.15% was successfully achieved for a silicon p-i-n waveguide modulator with 5μm-wide waveguide and 7mm-long modulation electrode.

Original languageEnglish
Title of host publicationIntegrated Optics
Subtitle of host publicationDevices, Materials, and Technologies XI
DOIs
Publication statusPublished - 2007 May 24
EventIntegrated Optics: Devices, Materials, and Technologies XI - San Jose, CA, United States
Duration: 2007 Jan 222007 Jan 24

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6475
ISSN (Print)0277-786X

Other

OtherIntegrated Optics: Devices, Materials, and Technologies XI
CountryUnited States
CitySan Jose, CA
Period07-01-2207-01-24

Fingerprint

Optical waveguides
optical waveguides
Modulators
modulators
Modulation
insulators
modulation
Waveguides
Silicon
waveguides
silicon
Substrates
Doping (additives)
Electrodes
electrodes
plasma diffusion
electrical resistivity
carrier injection
Nitrogen
Plasmas

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Hsu, M. T., Chuang, W-K., & Liao, J. C. (2007). Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates. In Integrated Optics: Devices, Materials, and Technologies XI [64751A] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6475). https://doi.org/10.1117/12.700601
Hsu, Mao Teng ; Chuang, Wen-Kuei ; Liao, Jia Ching. / Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates. Integrated Optics: Devices, Materials, and Technologies XI. 2007. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "The fabrication and characterization of the p-i-n optical waveguide modulators on silicon-on-insulator (SOI) substrate were demonstrated. The modulation was based on the mechanism of carrier injection, or plasma dispersion effect. The corresponding p and n regions were defined in both types of silicon substrates (conventional p-doped and highly resistive SOI substrates with respective resistivities of ρ∼7-10Ω-cm and ρ∼7000- 10000Ωcm) using the spin-on-dopant (SOD) technique. The SOD diffusion process was conducted at 900-1000°C in nitrogen ambient. The diffusion time and temperature, and the resistivity of SOI substrate used were the primary parameters dictating the resultant dopant concentrations and diffusion depths. For the modulators fabricated with various waveguide widths and electrode lengths, the corresponding modulation index was enhanced in response to an increase in the electrode (or modulation) length and/or a decrease in waveguide width. The highest modulation index of ∼4.15{\%} was successfully achieved for a silicon p-i-n waveguide modulator with 5μm-wide waveguide and 7mm-long modulation electrode.",
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Hsu, MT, Chuang, W-K & Liao, JC 2007, Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates. in Integrated Optics: Devices, Materials, and Technologies XI., 64751A, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6475, Integrated Optics: Devices, Materials, and Technologies XI, San Jose, CA, United States, 07-01-22. https://doi.org/10.1117/12.700601

Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates. / Hsu, Mao Teng; Chuang, Wen-Kuei; Liao, Jia Ching.

Integrated Optics: Devices, Materials, and Technologies XI. 2007. 64751A (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6475).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - The fabrication and characterization of the p-i-n optical waveguide modulators on silicon-on-insulator (SOI) substrate were demonstrated. The modulation was based on the mechanism of carrier injection, or plasma dispersion effect. The corresponding p and n regions were defined in both types of silicon substrates (conventional p-doped and highly resistive SOI substrates with respective resistivities of ρ∼7-10Ω-cm and ρ∼7000- 10000Ωcm) using the spin-on-dopant (SOD) technique. The SOD diffusion process was conducted at 900-1000°C in nitrogen ambient. The diffusion time and temperature, and the resistivity of SOI substrate used were the primary parameters dictating the resultant dopant concentrations and diffusion depths. For the modulators fabricated with various waveguide widths and electrode lengths, the corresponding modulation index was enhanced in response to an increase in the electrode (or modulation) length and/or a decrease in waveguide width. The highest modulation index of ∼4.15% was successfully achieved for a silicon p-i-n waveguide modulator with 5μm-wide waveguide and 7mm-long modulation electrode.

AB - The fabrication and characterization of the p-i-n optical waveguide modulators on silicon-on-insulator (SOI) substrate were demonstrated. The modulation was based on the mechanism of carrier injection, or plasma dispersion effect. The corresponding p and n regions were defined in both types of silicon substrates (conventional p-doped and highly resistive SOI substrates with respective resistivities of ρ∼7-10Ω-cm and ρ∼7000- 10000Ωcm) using the spin-on-dopant (SOD) technique. The SOD diffusion process was conducted at 900-1000°C in nitrogen ambient. The diffusion time and temperature, and the resistivity of SOI substrate used were the primary parameters dictating the resultant dopant concentrations and diffusion depths. For the modulators fabricated with various waveguide widths and electrode lengths, the corresponding modulation index was enhanced in response to an increase in the electrode (or modulation) length and/or a decrease in waveguide width. The highest modulation index of ∼4.15% was successfully achieved for a silicon p-i-n waveguide modulator with 5μm-wide waveguide and 7mm-long modulation electrode.

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Hsu MT, Chuang W-K, Liao JC. Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates. In Integrated Optics: Devices, Materials, and Technologies XI. 2007. 64751A. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.700601