Simple and reliable wafer-level electrical probing technique for III-nitride light-emitting epitaxial structures

Y. S. Zhao, C. L. Jensen, R. W. Chuang, H. P. Lee, Z. J. Dong, R. Shih

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report an easy-to-implement wafer-level electroluminescence characterization technique for InGaN/GaN light-emitting diodes (LED's) epi-wafers by means of multiple electrical probes. By first damaging the p-n junctions of the LED epilayer at localized spots, diode-like current versus voltage characteristics and emission spectra can be obtained at injection currents as high as 100 mA. This allows a relative but reliable comparison of device-related parameters such as differential quantum efficiency, leakage current, and series resistance among LED epi-wafers.

Original languageEnglish
Pages (from-to)212-214
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number5
DOIs
Publication statusPublished - 2000 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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