Abstract
This paper presents a novel and simple integrated gate driver circuit composed of only four thin-film transistors (TFTs) and three capacitors for slim-border and high-resolution applications. The input TFT has multi-functions to reduce the components of the circuit and its driving capability is enhanced to improve the rising time of the output waveform, so the size of the input TFT can be decreased. Moreover, the large-size pull- up TFT is also used to discharge the row line for decreasing the falling time of the output waveform, so that an additional large- size pull-down TFT can be eliminated for further diminishing the circuit area. Importantly, an inverse-coupling method is introduced to suppress the noise of the row line, which can also lessen the number of TFTs and simplify the circuit structure.
| Original language | English |
|---|---|
| Pages (from-to) | 1304-1307 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 46 |
| Issue number | Book 3 |
| DOIs | |
| Publication status | Published - 2015 Jun 1 |
| Event | 2015 SID International Symposium - San Jose, United States Duration: 2015 Jun 4 → … |
All Science Journal Classification (ASJC) codes
- General Engineering