Abstract
A novel gate driver circuit composed of four thin-film transistors (TFTs) and two capacitors is developed. Three-phase overlapping clock signals are used in multifunction input TFT and driving TFT, so the proposed circuit can have a simple structure. The electrical characteristics of a fabricated amorphous-indium-gallium-zinc-oxide TFT are measured to establish the model of HSPICE simulation. Simulated results confirm that the proposed gate driver circuit generates stable gate pulses according to the specification of a 5.46-in full high-definition panel and the single-stage layout area is 400 μ {\rm m\times 126~\mu m. These specifications are favorable for high-resolution and narrow-bezel active-matrix liquid crystal displays.
Original language | English |
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Article number | 7137631 |
Pages (from-to) | 808-810 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 36 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2015 Aug 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering