Abstract
A novel gate driver circuit composed of four thin-film transistors (TFTs) and two capacitors is developed. Three-phase overlapping clock signals are used in multifunction input TFT and driving TFT, so the proposed circuit can have a simple structure. The electrical characteristics of a fabricated amorphous-indium-gallium-zinc-oxide TFT are measured to establish the model of HSPICE simulation. Simulated results confirm that the proposed gate driver circuit generates stable gate pulses according to the specification of a 5.46-in full high-definition panel and the single-stage layout area is 400 μ {\rm m\times 126~\mu m. These specifications are favorable for high-resolution and narrow-bezel active-matrix liquid crystal displays.
| Original language | English |
|---|---|
| Article number | 7137631 |
| Pages (from-to) | 808-810 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 36 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2015 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Simplified Gate Driver Circuit for High-Resolution and Narrow-Bezel Thin-Film Transistor Liquid Crystal Display Applications. / Lin, Chih Lung; Chen, Fu Hsing; Ciou, Wun Cing; Du, Yuan Wei; Wu, Chia En; Lee, Ching En.
In: IEEE Electron Device Letters, Vol. 36, No. 8, 7137631, 01.08.2015, p. 808-810.Research output: Contribution to journal › Article
TY - JOUR
T1 - Simplified Gate Driver Circuit for High-Resolution and Narrow-Bezel Thin-Film Transistor Liquid Crystal Display Applications
AU - Lin, Chih Lung
AU - Chen, Fu Hsing
AU - Ciou, Wun Cing
AU - Du, Yuan Wei
AU - Wu, Chia En
AU - Lee, Ching En
PY - 2015/8/1
Y1 - 2015/8/1
N2 - A novel gate driver circuit composed of four thin-film transistors (TFTs) and two capacitors is developed. Three-phase overlapping clock signals are used in multifunction input TFT and driving TFT, so the proposed circuit can have a simple structure. The electrical characteristics of a fabricated amorphous-indium-gallium-zinc-oxide TFT are measured to establish the model of HSPICE simulation. Simulated results confirm that the proposed gate driver circuit generates stable gate pulses according to the specification of a 5.46-in full high-definition panel and the single-stage layout area is 400 μ {\rm m\times 126~\mu m. These specifications are favorable for high-resolution and narrow-bezel active-matrix liquid crystal displays.
AB - A novel gate driver circuit composed of four thin-film transistors (TFTs) and two capacitors is developed. Three-phase overlapping clock signals are used in multifunction input TFT and driving TFT, so the proposed circuit can have a simple structure. The electrical characteristics of a fabricated amorphous-indium-gallium-zinc-oxide TFT are measured to establish the model of HSPICE simulation. Simulated results confirm that the proposed gate driver circuit generates stable gate pulses according to the specification of a 5.46-in full high-definition panel and the single-stage layout area is 400 μ {\rm m\times 126~\mu m. These specifications are favorable for high-resolution and narrow-bezel active-matrix liquid crystal displays.
UR - http://www.scopus.com/inward/record.url?scp=84937958852&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84937958852&partnerID=8YFLogxK
U2 - 10.1109/LED.2015.2450231
DO - 10.1109/LED.2015.2450231
M3 - Article
AN - SCOPUS:84937958852
VL - 36
SP - 808
EP - 810
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 8
M1 - 7137631
ER -