A hybrid fin/planar lateral double-diffused MOSFET (LDMOS) design (hybrid FET) is proposed for the high-voltage input-output devices in a FinFET-based system-on-chip (SoC) technology. 3-D technology computer-aided design simulations show that a planar drift region and a planar drain region are advantageous for higher breakdown voltage (BV) to specific on-state resistance (R on\ sp) ratio (BV2/ R on\ sp). By slightly extending the planar portion of the semiconductor active region into the gated channel region, the theoretical limit of BV2/ R on\ sp for LDMOS can be surpassed. Hybrid FETs can be fabricated using a process flow that is compatible with the state-of-art FinFET SoC technology.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering