Simulation for the microcrystalline silicon thin film transistors by considering the change of acceptor-like state and microcrystal grain size effect

Fenq Lin Jenq, Jiann Ruey Chen, Bor Yir Chen, Fon Shan Yeh

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A numerical simulation to predict and analyze the characteristics of microcrystalline silicon thin-film transistors have been proposed. This model is derived from the Poisson's equation, with the consideration of the effect of microcrystal grain size. The microcrystalline silicon acceptor-like state characteristic energies are modified by the change of energy gap. This proposed model conforms fairly well with the experimental data.

Original languageEnglish
Pages (from-to)4246-4250
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number7 A
Publication statusPublished - 1997 Jul 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Simulation for the microcrystalline silicon thin film transistors by considering the change of acceptor-like state and microcrystal grain size effect'. Together they form a unique fingerprint.

  • Cite this