A numerical simulation to predict and analyze the characteristics of microcrystalline silicon thin-film transistors have been proposed. This model is derived from the Poisson's equation, with the consideration of the effect of microcrystal grain size. The microcrystalline silicon acceptor-like state characteristic energies are modified by the change of energy gap. This proposed model conforms fairly well with the experimental data.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||7 A|
|Publication status||Published - 1997 Jul 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)