Simulation for the microcrystalline silicon thin film transistors by considering the change of acceptor-like state and microcrystal grain size effect

Fenq Lin Jenq; Jiann Ruey Chen; Bor Yir Chen; Fon Shan Yeh

doi:10.1143/jjap.36.4246

Simulation for the microcrystalline silicon thin film transistors by considering the change of acceptor-like state and microcrystal grain size effect

Fenq Lin Jenq
, Jiann Ruey Chen
, Bor Yir Chen
, Fon Shan Yeh

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6 Citations (Scopus)

Abstract

A numerical simulation to predict and analyze the characteristics of microcrystalline silicon thin-film transistors have been proposed. This model is derived from the Poisson's equation, with the consideration of the effect of microcrystal grain size. The microcrystalline silicon acceptor-like state characteristic energies are modified by the change of energy gap. This proposed model conforms fairly well with the experimental data.

Original language	English
Pages (from-to)	4246-4250
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	36
Issue number	7 A
DOIs	https://doi.org/10.1143/jjap.36.4246
Publication status	Published - 1997 Jul

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/jjap.36.4246

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title = "Simulation for the microcrystalline silicon thin film transistors by considering the change of acceptor-like state and microcrystal grain size effect",

abstract = "A numerical simulation to predict and analyze the characteristics of microcrystalline silicon thin-film transistors have been proposed. This model is derived from the Poisson's equation, with the consideration of the effect of microcrystal grain size. The microcrystalline silicon acceptor-like state characteristic energies are modified by the change of energy gap. This proposed model conforms fairly well with the experimental data.",

author = "Jenq, \{Fenq Lin\} and Chen, \{Jiann Ruey\} and Chen, \{Bor Yir\} and Yeh, \{Fon Shan\}",

year = "1997",

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AU - Jenq, Fenq Lin

AU - Chen, Jiann Ruey

AU - Chen, Bor Yir

AU - Yeh, Fon Shan

PY - 1997/7

Y1 - 1997/7

N2 - A numerical simulation to predict and analyze the characteristics of microcrystalline silicon thin-film transistors have been proposed. This model is derived from the Poisson's equation, with the consideration of the effect of microcrystal grain size. The microcrystalline silicon acceptor-like state characteristic energies are modified by the change of energy gap. This proposed model conforms fairly well with the experimental data.

AB - A numerical simulation to predict and analyze the characteristics of microcrystalline silicon thin-film transistors have been proposed. This model is derived from the Poisson's equation, with the consideration of the effect of microcrystal grain size. The microcrystalline silicon acceptor-like state characteristic energies are modified by the change of energy gap. This proposed model conforms fairly well with the experimental data.

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UR - https://www.scopus.com/pages/publications/0031185990#tab=citedBy

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DO - 10.1143/jjap.36.4246

M3 - Article

AN - SCOPUS:0031185990

SN - 0021-4922

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SP - 4246

EP - 4250

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7 A

ER -

Simulation for the microcrystalline silicon thin film transistors by considering the change of acceptor-like state and microcrystal grain size effect

Abstract

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