Simulation of composite resonant tunneling diodes for multiple-valued logic applications

S. J. Wang, K. M. Uang

Research output: Contribution to conferencePaper

Abstract

This paper presents a theoretical study on the composite resonant tunneling diodes (RTDs) for repetition of negative differential resistances (NDRs). A simple method has been proposed to simulate the I-V characteristics of the composite RTDs, and results of the theoretical analysis are reported. Based on a variety of one-peak RTDs, the current-voltage (I-V) characteristics of two or more vertically or horizontally integrated, serially, and in parallel connected RTDs are calculated and analyzed. The simulated results are in good agreement with the experimental data.

Original languageEnglish
Pages322-324
Number of pages3
DOIs
Publication statusPublished - 1992 Jan 1
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92-08-2692-08-28

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Wang, S. J., & Uang, K. M. (1992). Simulation of composite resonant tunneling diodes for multiple-valued logic applications. 322-324. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.pc3-7