Simulation of composite resonant tunneling diodes for multiple-valued logic applications

Shui-Jinn Wang, K. M. Uang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a theoretical study on the composite resonant tunneling diodes (RTDs) for repetition of negative differential resistances (NDRs). A simple method has been proposed to simulate the I-V characteristics of the composite RTDs, and results of the theoretical analysis are reported. Based on a variety of one-peak RTDs, the current-voltage (I-V) characteristics of two or more vertically or horizontally integrated, serially, and in parallel connected RTDs are calculated and analyzed. The simulated results are in good agreement with the experimental data.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherPubl by Business Cent for Acad Soc Japan
Pages322-324
Number of pages3
Publication statusPublished - 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92-08-2692-08-28

Fingerprint

Resonant tunneling diodes
Composite materials
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Wang, S-J., & Uang, K. M. (1992). Simulation of composite resonant tunneling diodes for multiple-valued logic applications. In Conference on Solid State Devices and Materials (pp. 322-324). Publ by Business Cent for Acad Soc Japan.
Wang, Shui-Jinn ; Uang, K. M. / Simulation of composite resonant tunneling diodes for multiple-valued logic applications. Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1992. pp. 322-324
@inproceedings{8fac8b85877e4e1abe61ed075d2b3b8d,
title = "Simulation of composite resonant tunneling diodes for multiple-valued logic applications",
abstract = "This paper presents a theoretical study on the composite resonant tunneling diodes (RTDs) for repetition of negative differential resistances (NDRs). A simple method has been proposed to simulate the I-V characteristics of the composite RTDs, and results of the theoretical analysis are reported. Based on a variety of one-peak RTDs, the current-voltage (I-V) characteristics of two or more vertically or horizontally integrated, serially, and in parallel connected RTDs are calculated and analyzed. The simulated results are in good agreement with the experimental data.",
author = "Shui-Jinn Wang and Uang, {K. M.}",
year = "1992",
language = "English",
pages = "322--324",
booktitle = "Conference on Solid State Devices and Materials",
publisher = "Publ by Business Cent for Acad Soc Japan",

}

Wang, S-J & Uang, KM 1992, Simulation of composite resonant tunneling diodes for multiple-valued logic applications. in Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, pp. 322-324, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 92-08-26.

Simulation of composite resonant tunneling diodes for multiple-valued logic applications. / Wang, Shui-Jinn; Uang, K. M.

Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1992. p. 322-324.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Simulation of composite resonant tunneling diodes for multiple-valued logic applications

AU - Wang, Shui-Jinn

AU - Uang, K. M.

PY - 1992

Y1 - 1992

N2 - This paper presents a theoretical study on the composite resonant tunneling diodes (RTDs) for repetition of negative differential resistances (NDRs). A simple method has been proposed to simulate the I-V characteristics of the composite RTDs, and results of the theoretical analysis are reported. Based on a variety of one-peak RTDs, the current-voltage (I-V) characteristics of two or more vertically or horizontally integrated, serially, and in parallel connected RTDs are calculated and analyzed. The simulated results are in good agreement with the experimental data.

AB - This paper presents a theoretical study on the composite resonant tunneling diodes (RTDs) for repetition of negative differential resistances (NDRs). A simple method has been proposed to simulate the I-V characteristics of the composite RTDs, and results of the theoretical analysis are reported. Based on a variety of one-peak RTDs, the current-voltage (I-V) characteristics of two or more vertically or horizontally integrated, serially, and in parallel connected RTDs are calculated and analyzed. The simulated results are in good agreement with the experimental data.

UR - http://www.scopus.com/inward/record.url?scp=0026986549&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026986549&partnerID=8YFLogxK

M3 - Conference contribution

SP - 322

EP - 324

BT - Conference on Solid State Devices and Materials

PB - Publ by Business Cent for Acad Soc Japan

ER -

Wang S-J, Uang KM. Simulation of composite resonant tunneling diodes for multiple-valued logic applications. In Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan. 1992. p. 322-324