This paper presents a theoretical study on the composite resonant tunneling diodes (RTDs) for repetition of negative differential resistances (NDRs). A simple method has been proposed to simulate the I-V characteristics of the composite RTDs, and results of the theoretical analysis are reported. Based on a variety of one-peak RTDs, the current-voltage (I-V) characteristics of two or more vertically or horizontally integrated, serially, and in parallel connected RTDs are calculated and analyzed. The simulated results are in good agreement with the experimental data.
|Number of pages||3|
|Publication status||Published - 1992 Jan 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92-08-26 → 92-08-28|
All Science Journal Classification (ASJC) codes