Simulation of crystal growth and experiment analysis in excimer-laser crystallization of a-Si film with macro-micro model

Long Sun Chao, Yu Ru Chen, Chiung Nan Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, the excimer-laser-induced crystallization of amorphous silicon (a-Si) films was investigated numerically and experimentally. This study had investigated the effects of irradiating energy density on the grain size and structure by scanning electron microscopy (SEM). In the surface microstructure analysis of the laser-irradiated area, the critical fluences (full-melt threshold, FMT) between the partial melting and complete melting regimes can be found by applying scanning electron microscopy. An efficient two-dimensional numerical model is carried out to predict the critical fluences (FMT) and the transient temperature distribution during the laser processing by the finite element method. An macro-micro model has been developed for the melting and resolidification of thin Si films induced by excimer-laser annealing. Except temperature distributions, the macro-micro models can offer more information about solidification process, such as undercooling, grain size, grain density etc. The algorithm that allows for nucleation is based on classical nucleation theory. Accordingly, the model enables the prediction of grain size, as well as the calculation of other critical responses of the a-Si film. The average grain sizes, obtained from the simulation results of the proposed model, agree fairly well with those from the experimental data.

Original languageEnglish
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages1604-1610
Number of pages7
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 2009 Jun 72009 Jun 12

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period09-06-0709-06-12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Chao, L. S., Chen, Y. R., & Li, C. N. (2009). Simulation of crystal growth and experiment analysis in excimer-laser crystallization of a-Si film with macro-micro model. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 1604-1610). [5411389] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411389