A numerical simulation to predict and analyze the characteristics of microcrystalline silicon thin film transistors is proposed. This model is derived from Poisson's equation, with the consideration of the effect of microcrystal grain size. A reference microcrystal grain size is introduced and is obtained from the dependence of the energy gap on grain size. From this the density of microcrystalline silicon acceptor-like states and the mobility of microcrystalline silicon can also be deduced as functions of the grain size. The I-V characteristics of the device are obtained and are compared with experimental data from the literature. The results indicate that the proposed model conforms fairly well with the literature data.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics