Abstract
The paper describes a new model for simulation of the current/voltage characteristics of VMOS power transistors. The model includes the conventional MOS theory modified by mobility reduction, non-uniform concentration distribution in the channel, and the effective resistance of the drain region. Experimental results are discussed. A comparison of experimental and theoretical results shows that the model accurately predicts the current/voltage characteristics of the device.
Original language | English |
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Pages (from-to) | 331-337 |
Number of pages | 7 |
Journal | International Journal of Electronics |
Volume | 56 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1984 Mar |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering