Simulation of VMOS power transistors

Y. K. Fang, C. Y. Chang, C. H. Chen, B. D. Liu, S. J. Wang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The paper describes a new model for simulation of the current/voltage characteristics of VMOS power transistors. The model includes the conventional MOS theory modified by mobility reduction, non-uniform concentration distribution in the channel, and the effective resistance of the drain region. Experimental results are discussed. A comparison of experimental and theoretical results shows that the model accurately predicts the current/voltage characteristics of the device.

Original languageEnglish
Pages (from-to)331-337
Number of pages7
JournalInternational Journal of Electronics
Volume56
Issue number3
DOIs
Publication statusPublished - 1984 Mar

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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