The paper describes a new model for simulation of the current/voltage characteristics of VMOS power transistors. The model includes the conventional MOS theory modified by mobility reduction, non-uniform concentration distribution in the channel, and the effective resistance of the drain region. Experimental results are discussed. A comparison of experimental and theoretical results shows that the model accurately predicts the current/voltage characteristics of the device.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering