Simulation of VMOS power transistors

Y. K. Fang; C. Y. Chang; C. H. Chen; B. D. Liu; S. J. Wang

doi:10.1080/00207218408938822

Simulation of VMOS power transistors

Y. K. Fang, C. Y. Chang, C. H. Chen, B. D. Liu, S. J. Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The paper describes a new model for simulation of the current/voltage characteristics of VMOS power transistors. The model includes the conventional MOS theory modified by mobility reduction, non-uniform concentration distribution in the channel, and the effective resistance of the drain region. Experimental results are discussed. A comparison of experimental and theoretical results shows that the model accurately predicts the current/voltage characteristics of the device.

Original language	English
Pages (from-to)	331-337
Number of pages	7
Journal	International Journal of Electronics
Volume	56
Issue number	3
DOIs	https://doi.org/10.1080/00207218408938822
Publication status	Published - 1984 Mar

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1080/00207218408938822

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title = "Simulation of VMOS power transistors",

abstract = "The paper describes a new model for simulation of the current/voltage characteristics of VMOS power transistors. The model includes the conventional MOS theory modified by mobility reduction, non-uniform concentration distribution in the channel, and the effective resistance of the drain region. Experimental results are discussed. A comparison of experimental and theoretical results shows that the model accurately predicts the current/voltage characteristics of the device.",

author = "Fang, \{Y. K.\} and Chang, \{C. Y.\} and Chen, \{C. H.\} and Liu, \{B. D.\} and Wang, \{S. J.\}",

year = "1984",

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AU - Fang, Y. K.

AU - Chang, C. Y.

AU - Chen, C. H.

AU - Liu, B. D.

AU - Wang, S. J.

PY - 1984/3

Y1 - 1984/3

N2 - The paper describes a new model for simulation of the current/voltage characteristics of VMOS power transistors. The model includes the conventional MOS theory modified by mobility reduction, non-uniform concentration distribution in the channel, and the effective resistance of the drain region. Experimental results are discussed. A comparison of experimental and theoretical results shows that the model accurately predicts the current/voltage characteristics of the device.

AB - The paper describes a new model for simulation of the current/voltage characteristics of VMOS power transistors. The model includes the conventional MOS theory modified by mobility reduction, non-uniform concentration distribution in the channel, and the effective resistance of the drain region. Experimental results are discussed. A comparison of experimental and theoretical results shows that the model accurately predicts the current/voltage characteristics of the device.

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JO - International Journal of Electronics

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Simulation of VMOS power transistors

Abstract

All Science Journal Classification (ASJC) codes

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