Simulations of photo- carrier decay on heterojunction with intrinsic thin layer (HIT) solar cells with n-type wafers

A. Kanevce, J. V. Li, R. S. Crandall, M. R. Page, E. Iwaniczko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.

Original languageEnglish
Title of host publication10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
Pages73-74
Number of pages2
DOIs
Publication statusPublished - 2010 Nov 24
Event10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 - Atlanta, GA, United States
Duration: 2010 Sep 62010 Sep 9

Publication series

Name10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010

Other

Other10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
CountryUnited States
CityAtlanta, GA
Period10-09-0610-09-09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Modelling and Simulation

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