Abstract
The resistivity and thermoelectric power of orthorhombic TaS3 were measured simultaneously under pressure. The measurements reveal some features of the material which indicate a gap-state distribution similar to that in amorphous semiconductors. The discrepancies in energy gaps from different measurements and the large negative intercept of thermopower can be understood with this picture.
Original language | English |
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Pages (from-to) | 4502-4505 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 37 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1988 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics