Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

C. C. Huang; S. J. Chang; C. H. Kuo; C. H. Wu; C. H. Ko; Clement H. Wann; Y. C. Cheng; W. J. Lin

doi:10.1149/1.3569753

Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

C. C. Huang, S. J. Chang, C. H. Kuo, C. H. Wu, C. H. Ko, Clement H. Wann, Y. C. Cheng, W. J. Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO₂ recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

Original language	English
Pages (from-to)	H626-H629
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	6
DOIs	https://doi.org/10.1149/1.3569753
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.3569753

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title = "Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate",

abstract = "The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.",

author = "Huang, {C. C.} and Chang, {S. J.} and Kuo, {C. H.} and Wu, {C. H.} and Ko, {C. H.} and Wann, {Clement H.} and Cheng, {Y. C.} and Lin, {W. J.}",

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doi = "10.1149/1.3569753",

language = "English",

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TY - JOUR

T1 - Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

AU - Huang, C. C.

AU - Chang, S. J.

AU - Kuo, C. H.

AU - Wu, C. H.

AU - Ko, C. H.

AU - Wann, Clement H.

AU - Cheng, Y. C.

AU - Lin, W. J.

PY - 2011

Y1 - 2011

N2 - The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

AB - The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

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DO - 10.1149/1.3569753

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VL - 158

SP - H626-H629

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 6

ER -

Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

Abstract

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