Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

C. C. Huang, S. J. Chang, C. H. Kuo, C. H. Wu, C. H. Ko, Clement H. Wann, Y. C. Cheng, W. J. Lin

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Abstract

The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

Original languageEnglish
Pages (from-to)H626-H629
JournalJournal of the Electrochemical Society
Volume158
Issue number6
DOIs
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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    Huang, C. C., Chang, S. J., Kuo, C. H., Wu, C. H., Ko, C. H., Wann, C. H., Cheng, Y. C., & Lin, W. J. (2011). Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate. Journal of the Electrochemical Society, 158(6), H626-H629. https://doi.org/10.1149/1.3569753