Single crystalline Ge 1-x Mn x nanowires as building blocks for nanoelectronics

Machteld I. Van Der Meulen; Nikolay Petkov; Michael A. Morris; Olga Kazakova; Xinhai Han; Kang L. Wang; Ajey P. Jacob; Justin D. Holmes

doi:10.1021/nl802114x

Single crystalline Ge _1-x Mn _x nanowires as building blocks for nanoelectronics

Machteld I. Van Der Meulen, Nikolay Petkov, Michael A. Morris, Olga Kazakova, Xinhai Han, Kang L. Wang, Ajey P. Jacob, Justin D. Holmes

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm ²/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

Original language	English
Pages (from-to)	50-56
Number of pages	7
Journal	Nano letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1021/nl802114x
Publication status	Published - 2009 Jan

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl802114x

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abstract = "Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm 2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.",

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AU - Van Der Meulen, Machteld I.

AU - Petkov, Nikolay

AU - Morris, Michael A.

AU - Kazakova, Olga

AU - Han, Xinhai

AU - Wang, Kang L.

AU - Jacob, Ajey P.

AU - Holmes, Justin D.

PY - 2009/1

Y1 - 2009/1

N2 - Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm 2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

AB - Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm 2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

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Single crystalline Ge _1-x Mn _x nanowires as building blocks for nanoelectronics

Abstract

All Science Journal Classification (ASJC) codes

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