TY - GEN
T1 - Single-inductor four-switch non-inverting buck-boost dc-dc converter
AU - Chang, Chin Wei
AU - Wei, Chia-Ling
PY - 2011/6/28
Y1 - 2011/6/28
N2 - A single-inductor four-switch non-inverting buck-boost dc-dc converter was designed. Compared to other conventional buck-boost typologies, the presented converter reduces the number of external passive components and chip/PCB area. The chip was implemented by using the TSMC 0.35μm 3.3V/5V 2P4M polycide CMOS process. The input voltage range of the presented converter covers the full output voltage range of a Li-ion battery, its output voltage is 3.3V, and its maximal load current is 300 mA. The die area of the chip is 1.38 × 1.80 mm2, packed with a 40 S/B package.
AB - A single-inductor four-switch non-inverting buck-boost dc-dc converter was designed. Compared to other conventional buck-boost typologies, the presented converter reduces the number of external passive components and chip/PCB area. The chip was implemented by using the TSMC 0.35μm 3.3V/5V 2P4M polycide CMOS process. The input voltage range of the presented converter covers the full output voltage range of a Li-ion battery, its output voltage is 3.3V, and its maximal load current is 300 mA. The die area of the chip is 1.38 × 1.80 mm2, packed with a 40 S/B package.
UR - http://www.scopus.com/inward/record.url?scp=79959530857&partnerID=8YFLogxK
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U2 - 10.1109/VDAT.2011.5783629
DO - 10.1109/VDAT.2011.5783629
M3 - Conference contribution
AN - SCOPUS:79959530857
SN - 9781424484997
T3 - Proceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011
SP - 277
EP - 280
BT - Proceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011
T2 - 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011
Y2 - 25 April 2011 through 28 April 2011
ER -