Single mode InGaAs photonic crystal vertical-cavity surface-emitting lasers

I. L. Chen, I. C. Hsu, Fang I. Lai, C. H. Chiou, H. C. Kuo, Wei-Chou Hsu, G. Lin, H. P.D. Yang, J. Y. Chi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have made MOCVD-grown InGaAs photonic crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic applications. Multi-mode InGaAs VCSELs have achieved a maximum power of over 1 mW. Single-mode characteristics of 0.18 mW of the PhC-VCSELs have been made by using the combined AlOx oxide layer with proton-implantion for better current confinement.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs
Publication statusPublished - 2006 Dec 1
EventConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 26

Publication series

NameConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Other

OtherConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
CountryUnited States
CityLong Beach, CA
Period06-05-2106-05-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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