Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm

Tzong Bin Wang, Wei-Chou Hsu, I. Liang Chen, Tsin Dong Lee, Ke Hua Su, H. P D Yang, Chih Hung Chiou

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Fabrication and performance of large-detuning InGaAsGaAs strained, double-quantum-well, proton-implanted photonic crystal, vertical-cavity surface-emitting lasers is reported. The proton implant aperture is used to confine the current flow and the single-point defect photonic crystal is used to confine the optical mode, while the oxide aperture is introduced to reduce the leakage current. Single fundamental mode (side-mode suppression ratio >20 dB) continuous wave output power of 0.18 mW has been achieved in the 1170 nm range at room temperature.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume154
Issue number5
DOIs
Publication statusPublished - 2007 Apr 10

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm'. Together they form a unique fingerprint.

  • Cite this