Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm

Tzong Bin Wang; Wei Chou Hsu; I. Liang Chen; Tsin Dong Lee; Ke Hua Su; H. P.D. Yang; Chih Hung Chiou

doi:10.1149/1.2709511

Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm

Tzong Bin Wang
, Wei Chou Hsu
, I. Liang Chen
, Tsin Dong Lee
, Ke Hua Su
, H. P.D. Yang
, Chih Hung Chiou

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Fabrication and performance of large-detuning InGaAsGaAs strained, double-quantum-well, proton-implanted photonic crystal, vertical-cavity surface-emitting lasers is reported. The proton implant aperture is used to confine the current flow and the single-point defect photonic crystal is used to confine the optical mode, while the oxide aperture is introduced to reduce the leakage current. Single fundamental mode (side-mode suppression ratio >20 dB) continuous wave output power of 0.18 mW has been achieved in the 1170 nm range at room temperature.

Original language	English
Pages (from-to)	H351-H353
Journal	Journal of the Electrochemical Society
Volume	154
Issue number	5
DOIs	https://doi.org/10.1149/1.2709511
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

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10.1149/1.2709511

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title = "Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm",

abstract = "Fabrication and performance of large-detuning InGaAsGaAs strained, double-quantum-well, proton-implanted photonic crystal, vertical-cavity surface-emitting lasers is reported. The proton implant aperture is used to confine the current flow and the single-point defect photonic crystal is used to confine the optical mode, while the oxide aperture is introduced to reduce the leakage current. Single fundamental mode (side-mode suppression ratio >20 dB) continuous wave output power of 0.18 mW has been achieved in the 1170 nm range at room temperature.",

author = "Wang, \{Tzong Bin\} and Hsu, \{Wei Chou\} and Chen, \{I. Liang\} and Lee, \{Tsin Dong\} and Su, \{Ke Hua\} and Yang, \{H. P.D.\} and Chiou, \{Chih Hung\}",

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doi = "10.1149/1.2709511",

language = "English",

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pages = "H351--H353",

journal = "Journal of the Electrochemical Society",

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T1 - Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm

AU - Wang, Tzong Bin

AU - Hsu, Wei Chou

AU - Chen, I. Liang

AU - Lee, Tsin Dong

AU - Su, Ke Hua

AU - Yang, H. P.D.

AU - Chiou, Chih Hung

PY - 2007

Y1 - 2007

N2 - Fabrication and performance of large-detuning InGaAsGaAs strained, double-quantum-well, proton-implanted photonic crystal, vertical-cavity surface-emitting lasers is reported. The proton implant aperture is used to confine the current flow and the single-point defect photonic crystal is used to confine the optical mode, while the oxide aperture is introduced to reduce the leakage current. Single fundamental mode (side-mode suppression ratio >20 dB) continuous wave output power of 0.18 mW has been achieved in the 1170 nm range at room temperature.

AB - Fabrication and performance of large-detuning InGaAsGaAs strained, double-quantum-well, proton-implanted photonic crystal, vertical-cavity surface-emitting lasers is reported. The proton implant aperture is used to confine the current flow and the single-point defect photonic crystal is used to confine the optical mode, while the oxide aperture is introduced to reduce the leakage current. Single fundamental mode (side-mode suppression ratio >20 dB) continuous wave output power of 0.18 mW has been achieved in the 1170 nm range at room temperature.

UR - https://www.scopus.com/pages/publications/34047140354

UR - https://www.scopus.com/pages/publications/34047140354#tab=citedBy

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SN - 0013-4651

VL - 154

SP - H351-H353

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 5

ER -

Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm

Abstract

All Science Journal Classification (ASJC) codes

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