Abstract
Using an invented auxiliary bootstrapped charge pumper, a smart new design of single-power-supply-based transformerless IGBT/MOSFET gate driver with 100% high-side turn-on duty cycle operation performance is proposed in this paper. The experimental results of the proposed circuit have been obtained to verify the power sourcing performance of the invented transformerless auxiliary bootstrapped charge pumper for the high-side driving circuit of the single-level two-switch half-bridge using the same single power supply of the low-side driving circuit. Also, with the help of the invented auxiliary bootstrapped charge pumper, the application of the single-level two-switch half-bridge can be extended to the applications of multi-level multi-switch half-bridges.
| Original language | English |
|---|---|
| Pages (from-to) | 1205-1209 |
| Number of pages | 5 |
| Journal | PESC Record - IEEE Annual Power Electronics Specialists Conference |
| Volume | 2 |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 28th Annual IEEE Power Electronics Specialists Conference, PESC. Part 1 (of 2) - St.Louis, CA, USA Duration: 1997 Jun 23 → 1997 Jun 26 |
All Science Journal Classification (ASJC) codes
- Modelling and Simulation
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering