Single-step growth dynamics of core-shell GaN on Ga 2O 3 freestanding nanoprotruded microbelts

Prasana Sahoo, Joysurya Basu, Sandip Dhara, Hsin Chiao Fang, Chuan-Pu Liu, T. R. Ravindran, Sitaram Dash, Ashok Kumar Tyagi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Freestanding wurtzite GaN nanoprotruded microbelts with Ga 2O 3 core, with typical thickness 1-10 μm, and length of few millimeters are synthesized by thermal annealing of Ga metal and subsequent reaction with ammonia at a low flow rate. They are of distinctive rectangular shape with a typical width of 10-100 μm. Thickness of the belt is about 1/10th of the width and length up to a few millimeters. The GaN, Ga 2O 3 layers and the GaN-Ga 2O 3 interface are characterized by high-resolution transmission electron microscopy after focused ion beam sectioning of the belt. Initially, Ga 2O 3 nucleates after reaction with the O 2 available in the environment, and subsequent reaction with NH 3 results in the formation of core-shell structure in the catalyst-free vapor-solid growth process. Having a low-symmetry phase, Ga 2O 3 can grow only in certain preferred directions thus controlling the final morphology of the belt. Nanoscale protrusions ~50-100 nm found on the surface of the belts could be an ideal system for building functional devices.

Original languageEnglish
Pages (from-to)3447-3453
Number of pages7
JournalJournal of Materials Science
Volume47
Issue number7
DOIs
Publication statusPublished - 2012 Apr 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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