Single-ZnO-nanowire memory

Yen De Chiang, Wen Yuan Chang, Ching Yuan Ho, Cheng Ying Chen, Chih Hsiang Ho, Su Jien Lin, Tai Bor Wu, Jr Hau He

Research output: Contribution to journalArticlepeer-review

70 Citations (Scopus)


Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.

Original languageEnglish
Article number5741715
Pages (from-to)1735-1740
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 2011 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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