SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells

M. C. Wei; S. J. Chang; C. Y. Tsia; C. H. Liu; S. C. Chen

doi:10.1016/j.solener.2005.05.015

SiN_x deposited by in-line PECVD for multi-crystalline silicon solar cells

M. C. Wei
, S. J. Chang
, C. Y. Tsia
, C. H. Liu
, S. C. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

SiN_x:H anti-reflective coating (ARC) layers were successfully grown by an in-line plasma enhanced chemical vapor deposition (PECVD) system with an extremely high throughput. Film thickness and refractive index of the as-grown samples were evaluated as functions of growth parameters, such as growth pressure, total gas flow rate, radio frequency (RF) power and SiH ₄ to NH₃ gas ratio. It was found that we could achieve high quality films with proper growth conditions and proper post-deposition annealing.

Original language	English
Pages (from-to)	215-219
Number of pages	5
Journal	Solar Energy
Volume	80
Issue number	2
DOIs	https://doi.org/10.1016/j.solener.2005.05.015
Publication status	Published - 2006 Feb

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
General Materials Science

Access to Document

10.1016/j.solener.2005.05.015

Cite this

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title = "SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells",

abstract = "SiNx:H anti-reflective coating (ARC) layers were successfully grown by an in-line plasma enhanced chemical vapor deposition (PECVD) system with an extremely high throughput. Film thickness and refractive index of the as-grown samples were evaluated as functions of growth parameters, such as growth pressure, total gas flow rate, radio frequency (RF) power and SiH 4 to NH3 gas ratio. It was found that we could achieve high quality films with proper growth conditions and proper post-deposition annealing.",

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T1 - SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells

AU - Wei, M. C.

AU - Chang, S. J.

AU - Tsia, C. Y.

AU - Liu, C. H.

AU - Chen, S. C.

PY - 2006/2

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N2 - SiNx:H anti-reflective coating (ARC) layers were successfully grown by an in-line plasma enhanced chemical vapor deposition (PECVD) system with an extremely high throughput. Film thickness and refractive index of the as-grown samples were evaluated as functions of growth parameters, such as growth pressure, total gas flow rate, radio frequency (RF) power and SiH 4 to NH3 gas ratio. It was found that we could achieve high quality films with proper growth conditions and proper post-deposition annealing.

AB - SiNx:H anti-reflective coating (ARC) layers were successfully grown by an in-line plasma enhanced chemical vapor deposition (PECVD) system with an extremely high throughput. Film thickness and refractive index of the as-grown samples were evaluated as functions of growth parameters, such as growth pressure, total gas flow rate, radio frequency (RF) power and SiH 4 to NH3 gas ratio. It was found that we could achieve high quality films with proper growth conditions and proper post-deposition annealing.

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